scholarly journals Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride

2014 ◽  
Vol 251 (12) ◽  
pp. 2545-2550 ◽  
Author(s):  
Stephan Engels ◽  
Bernat Terrés ◽  
Felix Klein ◽  
Sven Reichardt ◽  
Matthias Goldsche ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Thermal Annealing ◽  
Hexagonal Boron Nitride ◽  
Graphene Devices

Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

Nano Letters ◽  
2012 ◽  
Vol 12 (9) ◽  
pp. 4449-4454 ◽  
Author(s):  
Andrei G. F. Garcia ◽  
Michael Neumann ◽  
François Amet ◽  
James R. Williams ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Devices

Correction to Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

Nano Letters ◽  
2013 ◽  
Vol 13 (5) ◽  
pp. 2314-2314 ◽  
Author(s):  
Andrei G. F. Garcia ◽  
Michael Neumann ◽  
François Amet ◽  
James R. Williams ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Devices

Crystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation

2020 ◽  
Vol MA2020-02 (7) ◽  
pp. 1132-1132
Author(s):  
Shunya Hayashida ◽  
Risa Saito ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Thermal Annealing ◽  
Hexagonal Boron Nitride ◽  
Crystal Quality ◽  
Quality Degradation

Thermal annealing effect on the electrical quality of graphene/hexagonal boron nitride heterostructure devices

2020 ◽  
Vol 31 (35) ◽  
pp. 355001
Author(s):  
Haiyang Pan ◽  
Qiaoming Wang ◽  
Xiaohua Wu ◽  
Tingting Song ◽  
Qiuming Song ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Thermal Annealing ◽  
Hexagonal Boron Nitride ◽  
Annealing Effect ◽  
Heterostructure Devices

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

ACS Nano ◽  
2012 ◽  
Vol 6 (10) ◽  
pp. 8583-8590 ◽  
Author(s):  
Ki Kang Kim ◽  
Allen Hsu ◽  
Xiaoting Jia ◽  
Soo Min Kim ◽  
Yumeng Shi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Dielectric Layer ◽  
Hexagonal Boron Nitride ◽  
Synthesis And Characterization ◽  
Nitride Film ◽  
Graphene Devices

scholarly journals A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

2011 ◽  
Vol 99 (23) ◽  
pp. 232104 ◽  
Author(s):  
P. J. Zomer ◽  
S. P. Dash ◽  
N. Tombros ◽  
B. J. van Wees
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Mobility ◽  
Graphene Devices

Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride

2014 ◽  
Vol 2 (37) ◽  
pp. 7776-7784 ◽  
Author(s):  
Muhammad Waqas Iqbal ◽  
Muhammad Zahir Iqbal ◽  
Xiaozhan Jin ◽  
Jonghwa Eom ◽  
Chanyong Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Devices

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown graphene devices on CVD-grown hexagonal boron nitride (h-BN).

scholarly journals Transferring Few-Layer Graphene Sheets on Hexagonal Boron Nitride Substrates for Fabrication of Graphene Devices

Graphene ◽  
2014 ◽  
Vol 03 (03) ◽  
pp. 25-35 ◽  
Author(s):  
J. A. Leon ◽  
N. C. Mamani ◽  
A. Rahim ◽  
L. E. Gomez ◽  
M. A. P. da Silva ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Sheets ◽  
Layer Graphene ◽  
Graphene Devices ◽  
Few Layer Graphene

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

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