Optical study of defects in nano-diamond films grown in linear antenna microwave plasma CVD from H2/CH4/CO2gas mixture

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A. Kromka
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O. Babchenko ◽  
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F. Liu ◽  
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Ryota Hishinuma ◽  
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Yusei Sakurai ◽  
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...  

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pp. 2612-2615 ◽  
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Štěpán Potocký ◽  
Oleg Babchenko ◽  
Karel Hruška ◽  
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1986 ◽  
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Marina Davydova ◽  
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Martin Čada ◽  
...  

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Vol 162 ◽  
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J. T. Glass ◽  
K. Kobashi

ABSTRACTB doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.


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