Valence band localized states in double quantum wells from first principles

2011 ◽  
Vol 248 (12) ◽  
pp. 2877-2883
Author(s):  
Arcesio Castañeda Medina ◽  
Rafael M. Gutiérrez
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
First Principles ◽  
Localized States ◽  
Double Quantum

Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells

1991 ◽  
Vol 44 (11) ◽  
pp. 5635-5647 ◽  
Author(s):  
P. Lefebvre ◽  
P. Bonnel ◽  
B. Gil ◽  
H. Mathieu
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Resonant Tunneling ◽  
Double Quantum

Evidence for condensation of excitons in double quantum wells

1996 ◽  
Vol 166 (7) ◽  
pp. 801-803 ◽  
Author(s):  
L.V. Butov ◽  
A. Zrenner ◽  
M. Hagn ◽  
G. Abstreiter ◽  
G. Boehm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Double Quantum

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

Magneto-optical spectroscopy of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells

1999 ◽  
Vol 110 (11) ◽  
pp. 633-638
Author(s):  
Joo In Lee ◽  
Annamratu Kasi Viswanath ◽  
Sungkyu Yu ◽  
Eun-Joo Shin ◽  
Kyu-Seok Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Spectroscopy ◽  
Double Quantum

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Tunnelling and relaxation in semiconductor double quantum wells

1997 ◽  
Vol 60 (3) ◽  
pp. 345-387 ◽  
Author(s):  
R Ferreira ◽  
G Bastard
Keyword(s):  
Quantum Wells ◽  
Double Quantum

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

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