Gate hysteresis originating from atomic layer deposition of Al2 O3 onto suspended carbon nanotube field-effect transistors

2011 ◽  
Vol 248 (11) ◽  
pp. 2664-2667 ◽  
Author(s):  
Matthias Muoth ◽  
Valentin Döring ◽  
Christofer Hierold
Keyword(s):  
Carbon Nanotube ◽  
Atomic Layer Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition

Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors

2010 ◽  
Vol 10 (6) ◽  
pp. 3805-3809 ◽  
Author(s):  
Yasuhiro Nakashima ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Mina Okochi ◽  
Hiroyuki Honda ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Atomic Layer Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Fabrication Process ◽  
Layer Deposition

Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

2015 ◽  
Vol 106 (9) ◽  
pp. 093507 ◽  
Author(s):  
Hye-Mi So ◽  
Hyekyoung Choi ◽  
Hyung Cheoul Shim ◽  
Seung-Mo Lee ◽  
Sohee Jeong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Deposition Effect ◽  
Pbs Quantum Dot

Atomic Layer Deposition of SiO2for the Performance Enhancement of Fin Field Effect Transistors

2013 ◽  
Vol 52 (11R) ◽  
pp. 116503 ◽  
Author(s):  
Kazuhiko Endo ◽  
Yuki Ishikawa ◽  
Takashi Matsukawa ◽  
Yongxun Liu ◽  
Shin-ichi O'uchi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect ◽  
Performance Enhancement ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition
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