The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon

2010 ◽  
Vol 248 (2) ◽  
pp. 352-360 ◽  
Author(s):  
E. Martinez Moreno ◽  
M. Kunst
Keyword(s):  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Oxide ◽  
Excess Charge ◽  
Silicon Silicon ◽  
Excess Charge Carrier

Charge carrier transport in a-Si:H/c-Si heterojunctions

2001 ◽  
Vol 664 ◽  
Author(s):  
Susanne von Aichberger ◽  
Frank Wünsch ◽  
Marinus Kunst
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Excess Charge ◽  
Si Substrate ◽  
Transient Photoconductivity

ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.

Influence of a space charge region on charge carrier kinetics in silicon wafers

2002 ◽  
Vol 91 (11) ◽  
pp. 9147-9150 ◽  
Author(s):  
S. von Aichberger ◽  
O. Abdallah ◽  
F. Wünsch ◽  
M. Kunst
Keyword(s):  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Wafers

scholarly journals Excess charge-carrier induced instability of hybrid perovskites

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Yuze Lin ◽  
Bo Chen ◽  
Yanjun Fang ◽  
Jingjing Zhao ◽  
Chunxiong Bao ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Excess Charge ◽  
Excess Charge Carrier

Sensitization and Charge Carrier Kinetics in ZnO Powders

1988 ◽  
Vol 43 (3) ◽  
pp. 189-192 ◽  
Author(s):  
Karl-Michael Schindler ◽  
Marinus Kunst
Keyword(s):  
Charge Carrier ◽  
Time Range ◽  
Excess Charge ◽  
Carrier Injection ◽  
Charge Carrier Dynamics ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay ◽  
Zno Powders ◽  
Zno Powder ◽  
Excess Charge Carrier

Abstract The influence of the excess charge carrier injection mechanism on the excess charge carrier dynamics in ZnO powder is investigated by contactless transient photoconductivity measurements. Excess charge carriers were produced by above bandgap light, subbandgap light and by injection from an adsorbed dye (Rhodamine B) after excitation of this dye. In all these cases the transient photoconductivity decay extends over a large time range but only after band-to-band excitation an appreciable decay is observed in the microsecond time range. The experimental results are discussed in particular with respect to photocatalysis.

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