Polarized Raman study of self-assembled Ge/Si dots under hydrostatic pressure

2009 ◽  
Vol 246 (3) ◽  
pp. 482-485 ◽  
Author(s):  
J. S. Reparaz ◽  
A. Bernardi ◽  
A. R. Goñi ◽  
M. I. Alonso ◽  
M. Garriga
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Study ◽  
Self Assembled ◽  
Polarized Raman

Micro-Raman Study of Self-Assembled Nanostructures: (1−x)PZN:xPT Solid Solution

1999 ◽  
Vol 581 ◽  
Author(s):  
S. Gupta ◽  
R. S. Katiyar ◽  
R. Guo ◽  
A. S. Bhalla
Keyword(s):  
Lead Titanate ◽  
Relaxor Ferroelectrics ◽  
Structure Property ◽  
Temperature Dependent ◽  
Property Relations ◽  
Polarization Mechanism ◽  
Raman Study ◽  
Self Assembled ◽  
Polarized Raman ◽  
Temperature Dependent Study

ABSTRACTRelaxor ferroelectrics are one of the important classes of self-assembled nanostructure composite materials. Interesting features associated with the nanoregions give rise to the most interesting device related characteristics and unusual properties in these materials. Besides, they possess the largest property coefficients by themselves or when modified with lead titanate (PT). In this report, a detailed temperature dependent study has been carried out on (1-x)PZN-xPT relaxors with compositions x = 0.05 and 0.085 using polarized Raman scattering under optical and E-field variables and inferred the structure-property relations in order to obtain information to characterize the material for matching the application criteria. In addition, phase transitions associated with the relaxors have also been investigated to understand the polarization mechanism(s) for the unpoled and poled specimens.

Dynamics of the commensurate-incommensurate phase transition in C2O4D ND4, 1/2 D2O: a polarized Raman study under pressure

1993 ◽  
Vol 3 (4) ◽  
pp. 1007-1029 ◽  
Author(s):  
M. Krauzman ◽  
A. Colline ◽  
D. Kirin ◽  
R. M. Pick ◽  
N. Toupry
Keyword(s):  
Phase Transition ◽  
Incommensurate Phase ◽  
Raman Study ◽  
Polarized Raman

High-pressure Raman study on CeO2 nanospheres self-assembled by 5 nm CeO2 nanoparticles

2011 ◽  
Vol 248 (5) ◽  
pp. 1154-1157 ◽  
Author(s):  
Bo Liu ◽  
Bingbing Liu ◽  
Quanjun Li ◽  
Zepeng Li ◽  
Mingguang Yao ◽  
...  
Keyword(s):  
High Pressure ◽  
Ceo2 Nanoparticles ◽  
Raman Study ◽  
Self Assembled

Raman study of self-assembled GaAs and AlAs islands embedded in InAs

2000 ◽  
Vol 61 (20) ◽  
pp. 13785-13790 ◽  
Author(s):  
D. A. Tenne ◽  
V. A. Haisler ◽  
A. I. Toropov ◽  
A. K. Bakarov ◽  
A. K. Gutakovsky ◽  
...  
Keyword(s):  
Raman Study ◽  
Self Assembled

Non-Hydrostatic Pressure-Induced Phase Transitions in Self-Assembled Diphenylalanine Microtubes

2018 ◽  
Vol 63 (9) ◽  
pp. 1311-1315 ◽  
Author(s):  
A. Krylov ◽  
S. Krylova ◽  
S. Kopyl ◽  
A. Kholkin
Keyword(s):  
Phase Transitions ◽  
Hydrostatic Pressure ◽  
Self Assembled

Raman study of α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals for piezoelectric applications

RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 55795-55800 ◽  
Author(s):  
Adrien Lignie ◽  
Patrick Hermet ◽  
Guillaume Fraysse ◽  
Pascale Armand
Keyword(s):  
Single Crystals ◽  
Raman Study ◽  
Polarized Raman

Raman lines due to Ge–O–Si bridges in α-Ge1−xSixO2 single crystals are identified with the help of polarized Raman and calculations.

Clusters of acrylonitrile in methanol/ethanol: A structure–spectra correlation by quantum chemical and polarized Raman study

2011 ◽  
Vol 380 (1-3) ◽  
pp. 24-33 ◽  
Author(s):  
Dheeraj K. Singh ◽  
Sunil K. Srivastava ◽  
Birendra P. Asthana
Keyword(s):  
Quantum Chemical ◽  
Raman Study ◽  
Polarized Raman

Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

1991 ◽  
Vol 220 ◽  
Author(s):  
Zhifeng Sui ◽  
Irving P. Herman ◽  
Joze Bevk
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonons ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Raman Study ◽  
Strained Layer Superlattices

ABSTRACTThe effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

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