Raman study of α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals for piezoelectric applications
Raman lines due to Ge–O–Si bridges in α-Ge1−xSixO2 single crystals are identified with the help of polarized Raman and calculations.
1981 ◽
Vol 36
(1)
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pp. 83-86
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2009 ◽
Vol 40
(11)
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pp. 1605-1614
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2000 ◽
Vol 85
(16)
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pp. 3544-3544
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2020 ◽
Vol 308
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pp. 110559
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