Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

2007 ◽  
Vol 244 (5) ◽  
pp. 1685-1690 ◽  
Author(s):  
Tooru Tanaka ◽  
Norihiro Murata ◽  
Katsuhiko Saito ◽  
Mitsuhiro Nishio ◽  
Qixin Guo ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Investigation of Proximity Rtd for Submicron Junctions in Vlsi Si Devices

1993 ◽  
Vol 303 ◽  
Author(s):  
W. Zagozdzon-Wosik ◽  
P. Grabiec ◽  
F. Romero-Borja ◽  
L. T. Wood ◽  
G. Lux
Keyword(s):  
Sheet Resistance ◽  
Thermal Diffusion ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Si Doping ◽  
Shallow Junctions ◽  
Rapid Thermal Diffusion ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTProximity rapid thermal diffusion is presented as a doping process for fabrication of very shallow junctions. The kinetics of Si doping with B, P and As is investigated using sheet resistance measurements, secondary ion mass spectroscopy and FTIR analyses. The efficiency of doping is affected by the dopant transport in the SOD which depends on the structure and composition of the SOD.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
Nobuaki Takahashi ◽  
Teruyasu Mizoguchi ◽  
Tsubasa Nakagawa ◽  
Tetsuya Tohei ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
First Principles ◽  
Secondary Ion Mass Spectroscopy ◽  
First Principles Study ◽  
Secondary Ion
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