Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

2006 ◽  
Vol 243 (7) ◽  
pp. 1614-1618 ◽  
Author(s):  
A. Žukauskas ◽  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
P. Pobedinskas ◽  
S. Juršėnas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescence Properties ◽  
Bulk Gan ◽  
Ingan Quantum Wells

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Luminescence properties of thick InGaN quantum-wells

2009 ◽  
Vol 6 (S2) ◽  
pp. S885-S888 ◽  
Author(s):  
Ansgar Laubsch ◽  
Werner Bergbauer ◽  
Matthias Sabathil ◽  
Martin Strassburg ◽  
Hans Lugauer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescence Properties ◽  
Ingan Quantum Wells

scholarly journals Closing the Yellow Gap with Eu- and Tb-Doped GaN: One Luminescent Host Resulting in Three Colours

2020 ◽  
Author(s):  
Cordula Braun ◽  
liuda Mereacre ◽  
Zheng Chen ◽  
Adam Slabon
Keyword(s):  
Light Emitting Diodes ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Highly Efficient ◽  
Bulk Gan ◽  
Colour Tuning

GaN is a key material when it comes to highly efficient warm white all-nitride phosphor converted light emitting diodes (pc-LED). Here we present the doping of bulk GaN with Europium and Terbium and the combination of both resulting in intriguing luminescence properties, pushing the role of GaN:Eu,Tb as a chief component in future light emitiing diodes. By this colour tuning we prove that one luminescent host can provide three colours (red, green, orange) and even the so called "yellow gap" could be closed with a III-nitride.<br>

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

2013 ◽  
Vol 382 ◽  
pp. 80-86 ◽  
Author(s):  
Kathryn M. Kelchner ◽  
Leah Y. Kuritzky ◽  
Kenji Fujito ◽  
Shuji Nakamura ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Emission Characteristics ◽  
Bulk Gan ◽  
Ingan Quantum Wells

scholarly journals Closing the Yellow Gap with Eu- and Tb-Doped GaN: One Luminescent Host Resulting in Three Colours

2020 ◽  
Author(s):  
Cordula Braun ◽  
liuda Mereacre ◽  
Zheng Chen ◽  
Adam Slabon
Keyword(s):  
Light Emitting Diodes ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Highly Efficient ◽  
Bulk Gan ◽  
Colour Tuning

GaN is a key material when it comes to highly efficient warm white all-nitride phosphor converted light emitting diodes (pc-LED). Here we present the doping of bulk GaN with Europium and Terbium and the combination of both resulting in intriguing luminescence properties, pushing the role of GaN:Eu,Tb as a chief component in future light emitiing diodes. By this colour tuning we prove that one luminescent host can provide three colours (red, green, orange) and even the so called "yellow gap" could be closed with a III-nitride.<br>

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

1999 ◽  
Vol 74 (10) ◽  
pp. 1460-1462 ◽  
Author(s):  
S. F. Chichibu ◽  
H. Marchand ◽  
M. S. Minsky ◽  
S. Keller ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Lateral Epitaxial Overgrowth ◽  
Bulk Gan ◽  
Ingan Quantum Wells

Spatially resolved luminescence properties of non- and semi-polar InGaN quantum wells on GaN microrods

2018 ◽  
Vol 51 (35) ◽  
pp. 355102
Author(s):  
J Dühn ◽  
C Tessarek ◽  
M Schowalter ◽  
T Coenen ◽  
B Gerken ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescence Properties ◽  
Spatially Resolved ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Sign in / Sign up

Export Citation Format

Share Document