Optical investigation of non-equilibrium carrier dynamics in differently doped VGF-grown ZnTe single crystals

2006 ◽  
Vol 243 (4) ◽  
pp. 929-933 ◽  
Author(s):  
R. Aleksiejūnas ◽  
A. Kadys ◽  
K. Jarašiūnas ◽  
N. Lovergine ◽  
T. Asahi
Keyword(s):  
Single Crystals ◽  
Carrier Dynamics ◽  
Optical Investigation ◽  
Non Equilibrium

scholarly journals A multi-stage multi-component transfer rate morphological population balance model for crystallization processes

CrystEngComm ◽  
2019 ◽  
Vol 21 (28) ◽  
pp. 4212-4220 ◽  
Author(s):  
Yi D. Shu ◽  
Jing J. Liu ◽  
Yang Zhang ◽  
Xue Z. Wang
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Transfer Rate ◽  
Population Balance ◽  
Balance Model ◽  
Population Balance Model ◽  
Multi Stage ◽  
Non Equilibrium

A model was proposed for modeling the non-equilibrium crystal growth of single crystals (Y. D. Shu, Y. Li, Y. Zhang, J. J. Liu and X. Z. Wang, CrystEngComm, 2018, 20, 5143–5153).

Optical investigation of SnS2 single crystals

1996 ◽  
Vol 31 (22) ◽  
pp. 5975-5978 ◽  
Author(s):  
S. Mandalidis ◽  
J. A. Kalomiros ◽  
K. Kambas ◽  
A. N. Anagnostopoulos
Keyword(s):  
Single Crystals ◽  
Optical Investigation

Optical investigation of the electrical anisotropy of (SN)x single crystals

1977 ◽  
Vol 80 (1) ◽  
pp. 119-123 ◽  
Author(s):  
H. P. Geserich ◽  
W. Möller ◽  
G. Scheiber ◽  
L. Pintschovius
Keyword(s):  
Single Crystals ◽  
Electrical Anisotropy ◽  
Optical Investigation

Non-equilibrium population and slow relaxation of Fe2+ in57Co:LiNbO3 and57Co:LiTaO3 single crystals

1990 ◽  
Vol 56 (1-4) ◽  
pp. 1539-1544 ◽  
Author(s):  
O. Leupold ◽  
M. Billenstein ◽  
E. Giesse ◽  
W. Gruber ◽  
B. Molnár ◽  
...  
Keyword(s):  
Single Crystals ◽  
Slow Relaxation ◽  
Non Equilibrium

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals

2009 ◽  
Vol 615-617 ◽  
pp. 303-306 ◽  
Author(s):  
Georgios Manolis ◽  
Kęstutis Jarašiūnas ◽  
Irina G. Galben-Sandulache ◽  
Didier Chaussende
Keyword(s):  
Carrier Density ◽  
Defect Density ◽  
Surface Region ◽  
Carrier Dynamics ◽  
Optical Investigation ◽  
Extended Defects ◽  
A Value ◽  
Continuous Feed ◽  
The Given

We applied a picosecond dynamic grating technique for studies of nonequilibrium carrier dynamics in a 0.8 mm thick bulk 3C-SiC crystal grown by the continuous feed physical vapor transport (CF-PVT) on 6H-SiC (0001) substrate. Investigation of carrier dynamics at surface or bulk excitation conditions was performed for excess carrier density in range from ~ 1017 cm-3 to ~ 1020 cm3 using for excitation weakly or strongly absorbed illumination. In DPBs free domains, the bipolar diffusion coefficient and carrier lifetime value at 300K were found gradually increasing with carrier density. The bipolar mobility vs. temperature dependence, μ. ~ T -k, provided a value k = 1.2 - 2 in range T < 100 K, thus indicating a negligible scattering by point and extended defects. These data indicated strong contribution of the carrier-density dependent but not defect-density governed scattering mechanisms, thus indicating high quality of the CF-PVT grown bulk cubic SiC. These studies were found in good correlation with the structural and photoluminescence characterization of the given crystal.

Untwinned single crystals ofYBa2Cu3O7−δ: An optical investigation of thea−banisotropy

1988 ◽  
Vol 37 (16) ◽  
pp. 9860-9863 ◽  
Author(s):  
C. Thomsen ◽  
M. Cardona ◽  
B. Gegenheimer ◽  
R. Liu ◽  
A. Simon
Keyword(s):  
Single Crystals ◽  
Optical Investigation

Optical investigation of Pr3+ doped CsSrI3 single crystals grown by EFG method

2020 ◽  
Vol 268 ◽  
pp. 127617
Author(s):  
Qian Yao ◽  
Lintao Liu ◽  
Weimin Dong ◽  
Hang Wen ◽  
Qingbo Wang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optical Investigation
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