scholarly journals High-pressure photoluminescence study of the electronic structure of InP/GaP quantum dots

2003 ◽  
Vol 235 (2) ◽  
pp. 412-416 ◽  
Author(s):  
C. Kristukat ◽  
A.R. Goñi ◽  
F. Hatami ◽  
S. Dreßler ◽  
W.T. Masselink ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Pressure ◽  
Electronic Structure ◽  
Photoluminescence Study

Electronic structure of self-assembled InP/GaP quantum dots from high-pressure photoluminescence

2003 ◽  
Vol 67 (7) ◽  
Author(s):  
A. R. Goñi ◽  
C. Kristukat ◽  
F. Hatami ◽  
S. Dreßler ◽  
W. T. Masselink ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Pressure ◽  
Electronic Structure ◽  
Self Assembled

Time-Resolved Photoluminescence Study of MnS/ZnS Core/Shell Quantum Dots at High Pressure and Low Temperature

2021 ◽  
Vol 125 (40) ◽  
pp. 22354-22359
Author(s):  
Da Huang ◽  
He Wang ◽  
Wei Zhao ◽  
Rucheng Dai ◽  
Zhongping. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Pressure ◽  
Low Temperature ◽  
Core Shell ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

2010 ◽  
Vol 96 (7) ◽  
pp. 073102 ◽  
Author(s):  
Ung Thi Dieu Thuy ◽  
Pham Thi Thuy ◽  
Nguyen Quang Liem ◽  
Liang Li ◽  
Peter Reiss
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Study

High pressure photoluminescence and Raman studies of ZnxCd1−xSe quantum dots

2008 ◽  
Vol 20 (32) ◽  
pp. 325214 ◽  
Author(s):  
Z H Ni ◽  
H M Fan ◽  
J Kasim ◽  
Y M You ◽  
Y P Feng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Pressure

Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots

2000 ◽  
Vol 69-70 ◽  
pp. 318-323 ◽  
Author(s):  
J Oswald ◽  
K Kuldová ◽  
J Zeman ◽  
E Hulicius ◽  
S Jullian ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Levels ◽  
Photoluminescence Study

Theoretical and experimental investigation of electronic structure and relaxation of colloidal nanocrystalline indium phosphide quantum dots

2003 ◽  
Vol 67 (7) ◽  
Author(s):  
Randy J. Ellingson ◽  
Jeff L. Blackburn ◽  
Jovan Nedeljkovic ◽  
Garry Rumbles ◽  
Marcus Jones ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Experimental Investigation ◽  
Electronic Structure ◽  
Indium Phosphide

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

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