N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering

2003 ◽  
Vol 235 (1) ◽  
pp. 111-114 ◽  
Author(s):  
Y. Ohmura ◽  
M. Takahashi ◽  
M. Suzuki ◽  
A. Emura ◽  
N. Sakamoto ◽  
...  
Keyword(s):  
Type B ◽  
Amorphous Si ◽  
B Doping ◽  
P Type ◽  
Hydrogenated Amorphous

New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

1990 ◽  
Vol 192 ◽  
Author(s):  
Y. Takeuchi ◽  
K. Nomoto ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Surface Temperature ◽  
Type A ◽  
Modulation Method ◽  
Temperature Modulation ◽  
Optical Gap ◽  
Doping Technique ◽  
Amorphous Si ◽  
P Type ◽  
Amorphous Sic ◽  
Hydrogenated Amorphous

ABSTRACTHighly conductive B-doped hydrogenated amorphous Si (a-Si:H) as well as amorphous SiC alloys (a-SiC:H) have been prepared from (SiH4) / (B2H6/SiH4) and (SiH4/CH4)/(B2H6/SiH4) plasmas, respectively by a novel surface-temperature-modulation method. Films produced by this technique exhibit a higher conductivity as compared to the conventionally prepared films, i.e., 7.0×l0−3scm−l for p-type a-Si:H with an optical gap of 1.7eV and 5.5×l0−5Scm−l for p-type a-SiC:H of optical gap 1.9eV.

An Overview of Doping Strategies in Si:MBE

1991 ◽  
Vol 220 ◽  
Author(s):  
Richard Kubiak ◽  
Carl Parry
Keyword(s):  
High Resolution ◽  
Low Temperatures ◽  
Good Control ◽  
Growth Conditions ◽  
Low Energy ◽  
Type B ◽  
Formidable Challenge ◽  
Sb Doping ◽  
B Doping ◽  
P Type

ABSTRACTThis paper reviews the diverse methods used to achieve doping during MBE of Si and SiGe, and the incorporation processes involved. The optimum choice of dopant and methodology depends on the most appropriate growth conditions for a given structure. At growth temperatures exceeding 750°C, Potential Enhanced n-type doping of coevaporated Sb is capable of achieving high resolution structures, at doping levels up to mid-1019 cm−3. At lower temperatures, such as those most suited to SiGe growth, Sb-doping becomes a formidable challenge, due to the high accumulated equilibrium coverages required. Low energy ion implantation appears to be the favoured route for good control, p-type B-doping can readily be achieved by coevaporation of compounds or, to avoid oxygen incorporation at low temperatures, the element. A “designer” chart for B-doping of Si is presented.

Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 247-251
Author(s):  
Wei Yuan Wang ◽  
Qing Nan Zhao ◽  
Wen Hui Yuan ◽  
Pu Lei Yang ◽  
Hong Yu Liang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Float Glass ◽  
B Doping ◽  
P Type ◽  
Hydrogenated Amorphous

P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6is 7.82 × 10-4S/cm.

Optical constants of rf sputtered hydrogenated amorphous Si

1979 ◽  
Vol 20 (2) ◽  
pp. 716-728 ◽  
Author(s):  
Eva C. Freeman ◽  
William Paul
Keyword(s):  
Optical Constants ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

1994 ◽  
Vol 336 ◽  
Author(s):  
G. De Cesare ◽  
F. Irrera ◽  
F. Lemmi ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Applied Voltage ◽  
Energy Gap ◽  
The Other ◽  
Time Response ◽  
Wavelength Selection ◽  
Load Impedance ◽  
Amorphous Si ◽  
Hydrogenated Amorphous ◽  
High Rejection

ABSTRACTWe present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-i-n-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depending on the polarity of the applied voltage. Due to different absorption at different wavelengths, the devices operate as bias-controlled light detectors in either the blue or the red regions. The energy gap and the thickness of the two intrinsic layers have been optimized to obtain a sharp wavelength selection (centered at 430 and 630 nm) with high rejection-ratios and good quantum efficiencies. The I-V characteristics and the device time response are investigated and simulated by SPICE.

Photoluminescence from n-(p-) type impurity doped Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Minoru Fujii ◽  
Atsushi Mimura ◽  
Shinji Hayashi ◽  
Dmitri Kovalev ◽  
Frederick Koch
Keyword(s):  
Free Electrons ◽  
Electron Hole ◽  
P Concentration ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Impurity Doped ◽  
Pl Intensity ◽  
B Doping ◽  
Three Body ◽  
P Type

AbstractEffects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

ESR and Raman Studies on Hydrogenated Amorphous Si-Sn

1984 ◽  
Vol 23 (Part 2, No. 10) ◽  
pp. L812-L814 ◽  
Author(s):  
Akiharu Morimoto ◽  
Toyotaka Kataoka ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Si ◽  
Hydrogenated Amorphous

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

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