Infrared Optical Properties of Amorphous Silicon Oxynitride and Their Theoretical Interpretation

1990 ◽  
Vol 121 (2) ◽  
pp. 641-656 ◽  
Author(s):  
U. Teschner
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Silicon Oxynitride ◽  
Theoretical Interpretation ◽  
Infrared Optical Properties

Effects of the Menstrual Cycle on the Red and Near-infrared Optical Properties of the Human Breast ¶

2000 ◽  
Vol 72 (3) ◽  
pp. 383-391 ◽  
Author(s):  
Rinaldo Cubeddu ◽  
Cosimo D'Andrea ◽  
Antonio Pifferi ◽  
Paola Taroni ◽  
Alessandro Torricelli ◽  
...  
Keyword(s):  
Optical Properties ◽  
Menstrual Cycle ◽  
Near Infrared ◽  
Human Breast ◽  
Infrared Optical Properties

Far Infrared Optical Properties of Amorphous As–Se System

1982 ◽  
Vol 21 (Part 1, No. 3) ◽  
pp. 418-423 ◽  
Author(s):  
Seinosuke Onari ◽  
Osamu Sugino ◽  
Michio Kato ◽  
Toshihiro Arai
Keyword(s):  
Optical Properties ◽  
Far Infrared ◽  
Infrared Optical Properties

On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

2009 ◽  
Vol 24 (8) ◽  
pp. 2561-2573 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Eric Eisenbraun ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Optical Properties ◽  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Cross Section ◽  
Silicon Oxycarbide ◽  
Nuclear Reaction Analysis ◽  
Structure Morphology ◽  
Composition Structure ◽  
Hydrogenated Amorphous

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.

scholarly journals Temperature dependent optical properties of amorphous silicon for diode laser crystallization

2012 ◽  
Vol 20 (S6) ◽  
pp. A856 ◽  
Author(s):  
Joachim Bergmann ◽  
Martin Heusinger ◽  
Gudrun Andrä ◽  
Fritz Falk
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Crystallization ◽  
Temperature Dependent
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