The Use of Electron-Image Contrast to Measure the Composition and Thickness of CuMo Thin Films

1989 ◽  
Vol 114 (1) ◽  
pp. 199-205 ◽  
Author(s):  
O. S. Rajora ◽  
A. E. Curzon
1994 ◽  
Vol 343 ◽  
Author(s):  
Shefford P. Baker ◽  
James A. Bain ◽  
Bruce M. Clemens ◽  
William D. Nix

ABSTRACTSeveral characteristics of compositionally-modulated Au-Ni thin films have been observed to vary with composition wavelength for wavelengths between 0.9 and 4.0 nm. The average lattice parameter normal to the film plane displays a maximum, the elastic stiffness shows a minimum and the substrate interaction stress in the film goes through a compressive peak in this regime. These variations are all consistent with a model in which deviations from bulk behavior are confined to the interfaces in the material. In this paper, we present the results of microstructural analyses of these films. Symmetric and asymmetric θ–2θ x-ray diffraction scans were conducted with scattering vectors oriented at a variety of angles to the film normal. Rocking curve analyses were also conducted. Features arising from the composition modulation in symmetric scans are quite sharp. However, asymmetric scans and rocking curves indicate that these films have a relatively poor {111} texture. Data from all scans provide clear evidence that Au intermixes preferentially into Ni. These results are supported by computer simulations of the diffraction spectra and the results of electron-image and -diffraction analyses. These measurements provide a consistent explanation for the mechanical properties of these films.


Author(s):  
Catalina Coll ◽  
Lluís López-Conesa ◽  
Cesar Magén ◽  
Florencio Sanchez ◽  
Josep Fontcuberta ◽  
...  

Author(s):  
X. Meng-Burany ◽  
A.E. Curzon

The present work concerns the back-scattered electron image contrast of a thin film of Cu64Mo36 on a silicon substrate. The contrast is defined by the ratio(1)where If and Ib are the backscattered electron signals from the film and from an adjacent bulk reference specimen. In previous work on thin sputtered films of Cu-Mo, Cu-W and Cu-Al both the film and the bulk reference specimen were perpendicular to the incident electron beam. It was found that the dependence of r on the accelerating voltage of the electron beam could be used to obtain both the thickness and the composition of the films. It is the purpose of the present work to determine whether the simple method previously used to extract the required information can be extended to include tilted specimens. As will be seen the method can be adapted to films tilted by less than 50°.


2017 ◽  
Vol 121 (17) ◽  
pp. 9300-9304 ◽  
Author(s):  
C. Coll ◽  
L. López-Conesa ◽  
J. M. Rebled ◽  
C. Magén ◽  
F. Sánchez ◽  
...  

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