Plasma Stimulated Impurity Redistribution in Silicon

1989 ◽  
Vol 111 (1) ◽  
pp. 81-88 ◽  
Author(s):  
S. V. Koveshnikov ◽  
E. B. Yakimov ◽  
N. A. Yarykin ◽  
V. A. Yunkin
Keyword(s):  
Impurity Redistribution

Copper multilayers for the investigation of subsurface impurity redistribution and resultant microstructure

2013 ◽  
Vol 103 (5) ◽  
pp. 051908 ◽  
Author(s):  
Michael Rizzolo ◽  
Steve Novak ◽  
Kathleen A. Dunn
Keyword(s):  
Impurity Redistribution

Plasma Stimulated Impurity Redistribution in Silicon

1989 ◽  
pp. 81-88
Author(s):  
S. V Koveshnikov ◽  
E . B Yakimov ◽  
N . A. Yakykin ◽  
V. A Yexkin
Keyword(s):  
Impurity Redistribution

Melting Phenomena and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Narayan ◽  
C. W. White ◽  
O. W. Holland
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Cross Section ◽  
Pulsed Laser ◽  
Nucleation And Growth ◽  
Bulk Nucleation ◽  
Section Electron ◽  
Section Electron Microscopy ◽  
Pulsed Laser Irradiation ◽  
Impurity Redistribution

ABSTRACTwe have investigated microstructural changes and phase transformations in 30Si+, 75As+, 63Cu+, and 115In+ implanted amorphous silicon layers as a function of pulse energy density. Cross-section electron microscopy studies have revealed the formation of two distinct regions, large and fine polycrystalline regions below the threshold for “defect-free” annealing. The fine polycrystalline region is formed primarily by explosive recrystallization, and occasionally by bulk nucleation and growth. The impurity redistribution in the large and fine polycrystalline regions were determined by Rutherford backscatterinq measurements. Large redistributions of impurities in the large poly region are consistent with velocity of solidifications of 3–5 ms−1. The nature of impurity redistributions in the fine poly region as a function of distribution coefficient provides information on the details of liquid phase crystallization phenomena.

Impurity Redistribution In Ion Implanted Si After Picosecond Nd Laser Pulse Irradiation

1982 ◽  
Vol 13 ◽  
Author(s):  
S.U. Campisano ◽  
P. Baeri ◽  
E. Rimini ◽  
G. Russo ◽  
A.M. Malvezzi
Keyword(s):  
Energy Density ◽  
Laser Pulse ◽  
Sample Surface ◽  
Relaxation Processes ◽  
Impurity Segregation ◽  
Carrier Temperature ◽  
Crystal Transition ◽  
Channeling Effect ◽  
Melt Duration ◽  
Impurity Redistribution

AbstractImpurity redistribution in Bi-implanted Si and in As-implanted Si has been investigated after irradiation with 25 ps Nd(λ=l.06 μm) laser pulse in the energy range 0.1–1.5 J/cm2 . Channeling effect in combination with 2.0 MeV He+ backscattering in glancing detection has been used to characterize the epitaxial crystallization, the impurity location and its depth distribution. The amorphous to single crystal transition occurs at an energy density of about 0.4 J/cm 2 . Bi atoms are located after crystallization in substitutional lattice sites for the in depth part of the distribution. Part of the Bi atoms accumulated at the sample surface and the amount of segregation increases with the pulse energy density and depends on the substrate orientation. A computer model has been also developed to calculate several parameters of interest, as the melt threshold,the melt duration, the carrier temperature etc including a detailed description of the absorption and of the energy relaxation processes. The calculations indicate that the simple thermal description accounts quantitatively for the experimental data on melt duration and impurity segregation.

Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films

1997 ◽  
Vol 71 (22) ◽  
pp. 3215-3217 ◽  
Author(s):  
J. von Borany ◽  
R. Grötzschel ◽  
K. H. Heinig ◽  
A. Markwitz ◽  
W. Matz ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Impurity Redistribution
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