Electrical Resistivity of Thin Metal Films Vapor-Quenched at 77 K. Cu, Ag, Au, Ni, Pd, and Pt

1987 ◽  
Vol 102 (2) ◽  
pp. 711-717 ◽  
Author(s):  
S. Nagata ◽  
M. Ogino ◽  
S. Taniguchi
Keyword(s):  
Electrical Resistivity ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

The Influence of Charge Effects on the Growth and Electrical Resistivity of Thin Metal Films

1967 ◽  
Vol 38 (4) ◽  
pp. 1986-1987 ◽  
Author(s):  
D. I. Kennedy ◽  
R. E. Hayes ◽  
R. W. Alsford
Keyword(s):  
Electrical Resistivity ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Charge Effects

the Microstructure and Electrical Resistivity of Cluster-Based thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Jeffery D. Bielefeld ◽  
Ronald P. Andres
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Metal Films ◽  
Thin Metal ◽  
Silver Clusters ◽  
Vacuum Deposition ◽  
Thin Metal Films ◽  
Resistivity Measurements ◽  
Glass Substrates

ABSTRACTCluster-assembled thin metal films exhibit properties which are different from those of films obtained by conventional atomic-deposition. We present TEM data on the evolution of 2-D Microstructure and SFM data on the evolution of 3-D Microstructure in thin films grown by vacuum deposition of preformed silver clusters and of preformed acetylene-silver clusters on flat SiO2, and Mica. Electrical resistivity measurements of cluster-based Ag and Ag/C2H2 films deposited on glass substrates with nominal film thicknesses of 5 nm - 50 nm are also presented and discussed.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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