Stimulated-Emission Spectroscopy of Er3+ Ions in Cubic (Y, Ln)3Al5O12 and Monoclinic K(Y, Ln)W2O8 Single Crystals

1986 ◽  
Vol 96 (2) ◽  
pp. K175-K179
Author(s):  
A. A. Kaminskii
Keyword(s):  
Single Crystals ◽  
Emission Spectroscopy ◽  
Stimulated Emission

Stimulated emission spectroscopy of Pr3+ ions in orthorhombic YAlO3 single crystals

1988 ◽  
Vol 105 (2) ◽  
pp. K155-K159 ◽  
Author(s):  
A. A. Kaminskii ◽  
K. Kurbanov ◽  
K. L. Ovanesyan ◽  
A. G. Petrosyan
Keyword(s):  
Single Crystals ◽  
Emission Spectroscopy ◽  
Stimulated Emission

Bridgman Growth and Stimulated-Emission Spectroscopy of Orthorhombic LuAlOs3 Single Crystals Doped with Nd3+ and Pr3+ Ions

1991 ◽  
Vol 125 (1) ◽  
pp. 353-361 ◽  
Author(s):  
A. A. Kaminskii ◽  
A. G. Petrosyan ◽  
A. A. Markosyan ◽  
G. O. Shironyan
Keyword(s):  
Single Crystals ◽  
Emission Spectroscopy ◽  
Stimulated Emission ◽  
Bridgman Growth

Stimulated emission in sexithiophene single crystals

1997 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Pierre Valat ◽  
Faycal Kouki ◽  
Veronique Wintgens
Keyword(s):  
Single Crystals ◽  
Stimulated Emission

Sxes Study of Transition Metal Silicide Films and their Contacts to Semiconductors

1990 ◽  
Vol 187 ◽  
Author(s):  
H. Watabe ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka ◽  
M. Kubota ◽  
...  
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Emission Spectroscopy ◽  
Primary Electron ◽  
Contact System ◽  
Metal Silicide ◽  
X Ray ◽  
Atomic Structures ◽  
Destructive Analysis ◽  
Non Destructive

AbstractSpectra obtained by a new soft x-ray emission spectroscopy(SXES) apparatus again exhibited clear differences among Si-compounds and Si crystal. A non-destructive analysis of an annealed transition metal(TMSi:film)/Si(111) contact system was carried out using either the distinct differences of Si L2, 3 SXES spectra between TMSi's and Si single crystals or the fad that the soft x-ray production depth increases in a solid with the energy of the primary electron, Ep. It was shown that the apparatus was capable of exploring electronic and atomic structures of a multi-layered contact system grown on a Si(111) substrate.

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