Investigation of radiation damage in ion implanted silicon crystals by pendellösung topography

1979 ◽  
Vol 51 (2) ◽  
pp. 407-418 ◽  
Author(s):  
O. Alstrup
Keyword(s):  
Radiation Damage ◽  
Silicon Crystals ◽  
Ion Implanted

Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals

1982 ◽  
Vol 53 (1) ◽  
pp. 774-776 ◽  
Author(s):  
T. Mitsuishi ◽  
Y. Sasaki ◽  
Huynh van Thieu ◽  
N. Yoshihiro
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Silicon Crystals ◽  
Ion Implanted

Radiation damage in ion implanted vanadium

1974 ◽  
Vol 21 (1) ◽  
pp. 51-59 ◽  
Author(s):  
M. Gettings ◽  
O. Meyer ◽  
G. Linker
Keyword(s):  
Radiation Damage ◽  
Ion Implanted

Investigation of radiation damage in ion implanted and annealed SiC layers

1995 ◽  
Vol 106 (1-4) ◽  
pp. 339-345 ◽  
Author(s):  
W. Wesch ◽  
A. Heft ◽  
J. Heindl ◽  
H.P. Strunk ◽  
T. Bachmann ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Ion Implanted
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