Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xP

1974 ◽  
Vol 24 (2) ◽  
pp. K189-K192 ◽  
Author(s):  
R. Bindemann ◽  
A. Zehe ◽  
K. Buchheiser ◽  
G. Kühn
Keyword(s):  
Acceptor Pair ◽  
Exciton Recombination ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Fabrication and Luminescence Properties of Monoclinic Gallium Oxide (β-Ga2O3) Nanostructures

2006 ◽  
Vol 951 ◽  
Author(s):  
Aurangzeb Khan ◽  
Wojciech M. Jadwisienczak ◽  
Henryk J. Lozykowski ◽  
Martin E. Kordesch
Keyword(s):  
Gallium Oxide ◽  
Luminescence Band ◽  
Thermal Evaporation ◽  
Acceptor Pair ◽  
Evaporation And Condensation ◽  
Argon Flow ◽  
Exciton Recombination ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Micro Pillars

ABSTRACTβ-Ga2O3 nanostructures including nanowires, nanorods, nano and micro-pillars, nanosheets and nanobelts were successfully fabricated by simple and efficient thermal evaporation and condensation technique under argon flow.. The structures have been investigated by the electron microscope, XRD and EDX techniques and shown that nanostructures are predominatly β-Ga2O3 without other crystallographic phases. Cathodouminescence of as-grown nanostructures was investigated in the 10-300 K temperature range and exhibit luminescence band centered at 485 nm at 300 K due to donor-acceptor pair recombination. A new luminescence band centered at 387 nm developes at temperature below 150 K due to self-trapped exciton recombination.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

scholarly journals Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena

2018 ◽  
Vol 1124 ◽  
pp. 041023
Author(s):  
N A Talnishnikh ◽  
E I Shabunina ◽  
N M Shmidt ◽  
A E Chernyakov ◽  
D S Arteev ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair
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