Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. II. Fixed charge

1972 ◽  
Vol 11 (2) ◽  
pp. 669-675 ◽  
Author(s):  
J. L. Pautrat ◽  
J. C. Pfister
Keyword(s):  
Electronic Properties ◽  
Growth Conditions ◽  
Fixed Charge ◽  
Oxide Growth

A Probe of Chemical Oxide Growth Conditions

2001 ◽  
Vol 76-77 ◽  
pp. 185-188
Author(s):  
Larry W. Shive ◽  
Claire Frey ◽  
Carissima Vitus
Keyword(s):  
Growth Conditions ◽  
Oxide Growth

Influence of the growth conditions on the LaAIO 3 /SrTiO 3 interface electronic properties

2010 ◽  
Vol 91 (1) ◽  
pp. 17004 ◽  
Author(s):  
C. Cancellieri ◽  
N. Reyren ◽  
S. Gariglio ◽  
A. D. Caviglia ◽  
A. Fête ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Growth Conditions

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

2021 ◽  
Author(s):  
Hidetoshi Mizobata ◽  
Mikito Nozaki ◽  
Takuma Kobayashi ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Defect Formation ◽  
Fixed Charge ◽  
Oxide Semiconductor ◽  
Oxide Growth ◽  
Charge Generation ◽  
Mos Devices ◽  
Defect Passivation ◽  
Interface Structures ◽  
Electrical Characterizations ◽  
Mos Structures

Abstract A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by reduction of the Ga-oxide (GaOx) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaOx growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaOx/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.

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