Theory of laser generation threshold in homogeneous semiconductors with exponential band tail

1972 ◽  
Vol 9 (1) ◽  
pp. 59-67 ◽  
Author(s):  
L. P. Godenko ◽  
V. S. Mashkevich
2001 ◽  
Vol 11 (PR2) ◽  
pp. Pr2-39-Pr2-42 ◽  
Author(s):  
M. Kado ◽  
T. Kawachi ◽  
N. Hasegawa ◽  
M. Tanaka ◽  
K. Sukegawa ◽  
...  

Author(s):  
Adam Wright ◽  
Rebecca Milot ◽  
Giles Eperon ◽  
Henry Snaith ◽  
Michael Johnston ◽  
...  
Keyword(s):  

2021 ◽  
Vol 11 (12) ◽  
pp. 5440
Author(s):  
Elena A. Anashkina ◽  
Vitaly V. Dorofeev ◽  
Alexey V. Andrianov

Microresonator-based lasers in the two-micron range are interesting for extensive applications. Tm3+ ions provide high gain; therefore, they are promising for laser generation in the two-micron range in various matrices. We developed a simple theoretical model to describe Tm-doped glass microlasers generating in the 1.9–2 μm range with in-band pump at 1.55 μm. Using this model, we calculated threshold pump powers, laser generation wavelengths and slope efficiencies for different parameters of Tm-doped tellurite glass microspheres such as diameters, Q-factors, and thulium ion concentration. In addition, we produced a 320-μm tellurite glass microsphere doped with thulium ions with a concentration of 5·1019 cm−3. We attained lasing at 1.9 μm experimentally in the produced sample with a Q-factor of 106 pumped by a C-band narrow line laser.


2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.


Author(s):  
Max Hilaire Wolter ◽  
Romain Carron ◽  
Enrico Avancini ◽  
Benjamin Bissig ◽  
Thomas Paul Weiss ◽  
...  

1995 ◽  
Vol 16 (2) ◽  
pp. 121-138 ◽  
Author(s):  
S. Antrobus ◽  
D. Husain ◽  
Jie Lei ◽  
F. Castaño ◽  
M. N. Sanchez Rayo

A time-resolved investigation is presented of the electronic energy distribution in SrI following the collision of the optically metastable strontium atom, Sr [5s5p(3PJ)], with the molecule CF3I. Sr[5s5p(3PJ)], 1.807 eV above its 5s2(1S0) electronic ground state, was generated by pulsed dye-laser excitation of ground state strontium vapour to the Sr(53P1) state at , λ =689.3 nm {Sr(53P1←51S0)} at elevated temperature (840 K) in the presence of excess helium buffer gas in which rapid Boltzmann equilibration within the 53PJ spin-orbit manifold takes place. Time resolved atomic emission from Sr(53P1→51S0) at the resonance transition and the molecular chemiluminescence from SrI(A2∏1,2,3/2,B2∑+→X2∑+) resulting from reaction of the excited atom with CF3I were recorded and shown to be exponential in character. SrI in the A2∏1/2,3/2 (172.5, 175.4 kJ mol-1) and B2∑+ (177.3 kJ mol-1) states are energetically accessible on collision by direct-I-atomic abstraction between Sr(3P) and CF3I. The first-order decay coefficients for the atomic and molecular emissions are found to be equal under identical conditions and hence SrI(A2∏1/2,3/2, B2∑+) are shown to arise from direct I- atom abstraction reactions. The molecular systems recorded were SrI (A2∏1/2→X2∑+, Δv=0, λ=694 nm), SrI(A2∏3/2→X2∑+, Δv=0, λ=677 nm) and SrI(B2∑+→X2∑+) (Δv=0, λ=674 nm), dominated by the Δv=0 sequences on account of Franck-Condon considerations. The combination of integrated m61ecular and atomic intensity measurements yields estimates of the branching ratios into the specific electronic states, A1/2, A3/2 and B, arising from Sr(53PJ)+CF3I which are found to be as follows: A1/2,1.2 × 10-2; A3/2, 6.7 × 10-3; B, 5.1 × 10-3 yielding ∑SrI(A1/2+A3/2+B)=2.4 × 10-2. As only the X, A and B states SrI are accessible on reaction, assuming that the removal of Sr(53PJ) occurs totally by chemical removal, this yields an upper limit for the branching ratio into the ground state of ca. 98%. The present results are compared with previous time-resolved measurements on excited states of strontium halides that we have reported on various halogenated species resulting from reactions of Sr(53PJ), together with analogous chemiluminescence studies on Sr(3PJ) and Ca(43PJ) from molecular beam measurements.


Sign in / Sign up

Export Citation Format

Share Document