Ionized impurity density and mobility in n-GaAs

1971 ◽  
Vol 8 (2) ◽  
pp. K89-K92 ◽  
Author(s):  
D. Kranzer ◽  
G. Eberharter
Keyword(s):  
Impurity Density

scholarly journals Radiated energy and impurity density changes during intensive hydrogen influx in the PLT tokamak

1981 ◽  
Author(s):  
E. Hinnov ◽  
J. Hosea ◽  
H. Hsuan ◽  
F. Jobes ◽  
E. Meservey ◽  
...  
Keyword(s):  
Impurity Density ◽  
Radiated Energy

Measurements of large poloidal variations of impurity density in the Alcator C-Mod H-mode barrier region

2002 ◽  
Vol 9 (10) ◽  
pp. 4188-4192 ◽  
Author(s):  
T. Sunn Pedersen ◽  
R. S. Granetz ◽  
E. S. Marmar ◽  
D. Mossessian ◽  
J. W. Hughes ◽  
...  
Keyword(s):  
Impurity Density ◽  
Barrier Region

Effects of Implantation and Impurity Density on Disorder of AlAs/GaAs Superlattice

1984 ◽  
Author(s):  
M. KAWABE ◽  
N. MATSUURA ◽  
N. SHIMIZU ◽  
F. HASEGAWA ◽  
Y. NANNICHI
Keyword(s):  
Impurity Density

HEAVILY DOPED HARMONIC CONFINED QUANTUM WIRES

1992 ◽  
Vol 06 (29) ◽  
pp. 1881-1885
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Density Of States ◽  
Gate Voltage ◽  
Quantum Wires ◽  
Impurity Band ◽  
Semiconductor Heterostructures ◽  
One Dimensional ◽  
Impurity Density ◽  
Heavily Doped

Quasi-one-dimensional channels have already been fabricated by holographic lithography on semiconductor heterostructures. We study the formation of an impurity band for shallow donors located inside the channels assuming they have been created by applying a modulated gate voltage in a quantum well of AlxGa1−xAs−GaAs. We calculate the changes in the impurity density of states as a function of the gate voltage. It is shown that the increase of the applied gate voltage leads to higher binding energy and larger impurity bandwidth.

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