ITO with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

2021 ◽  
Author(s):  
Pan Dai ◽  
Junhua Long ◽  
Sun Qiangjian ◽  
Yuanyuan Wu ◽  
Ming Tan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Radiation Resistance ◽  
High Carrier ◽  
Carrier Collection

Effects of Ga Compositional Grading on CIGS Electronic Properties Relevant to Solar Cell Performance

2009 ◽  
Vol 1165 ◽  
Author(s):  
JinWoo Lee ◽  
Jeroen K.J. van Duren ◽  
Alex Pudov ◽  
Miguel Contreras ◽  
David J. Cohen
Keyword(s):  
Solar Cell ◽  
Minority Carrier ◽  
Defect Density ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Free Hole ◽  
Deep Acceptor ◽  
Free Carrier Density ◽  
Carrier Collection ◽  
Compositional Grading

AbstractTransient photocurrent (TPI) and photocapacitance (TPC) spectroscopy have been applied to a set of compositional graded CuIn1-xGaxSe2 (CIGS) solar cell devices deposited by the vacuum co-evaporation method at the National Renewable Energy Laboratory. These measurements provide a spectral map of the optically induced release of carriers for photon energies from below 1 eV to 2 eV. By comparing the two types of spectra one can distinguish majority from minority carrier processes and they clearly reveal a higher degree of minority carrier collection for devices in which the Ga fraction increased monotonically with distance from the junction. This agrees with notions of how compositional grading improves overall cell performance. Minority carrier collection was even more strongly enhanced in sample devices incorporating v-shaped Ga-grading. Spatial profiles of the free hole carrier densities and deep acceptor concentrations were examined using drive-level capacitance profiling (DLCP). In the compositionally graded sample devices we found that the free carrier density decreased and that defect density increased with increasing Ga fraction toward back contact.

scholarly journals Radiation resistance of silicon solar cell

2015 ◽  
Vol 20 (2) ◽  
Author(s):  
Андрей Владимирович Гетьман ◽  
Михало Григорович Душейко ◽  
А. В. Иващук ◽  
М. С. Фадеев ◽  
Ю. Якименко
Keyword(s):  
Solar Cell ◽  
Radiation Resistance ◽  
Silicon Solar Cell

scholarly journals Extracting Mobility-Lifetime Product in Solar Cell Absorbers Using Quantum Efficiency Analysis

2015 ◽  
Vol 1771 ◽  
pp. 139-144 ◽  
Author(s):  
Jeremy R. Poindexter ◽  
Riley E. Brandt ◽  
Niall M. Mangan ◽  
Tonio Buonassisi
Keyword(s):  
Solar Cell ◽  
Quantum Efficiency ◽  
Minority Carrier ◽  
Absorption Data ◽  
Multiple Parameters ◽  
Quantitative Measurements ◽  
Collection Probability ◽  
Carrier Collection ◽  
Minority Carrier Mobility ◽  
Analytic Models

ABSTRACTThe long-wavelength quantum efficiency (QE) response of photovoltaic absorbers is determined by the length scales for minority carrier collection. However, extracting quantitative measurements of minority carrier mobility-lifetime product (μτ) is complicated by uncertainty in other factors such as the depletion width, electric field, and the absorption coefficient. We apply previously developed methods to obtain estimates for μτ in a tin(II) sulfide (SnS) solar cell. We compare three analytic models for the minority carrier collection probability as a function of absorber depth to determine which model most accurately captures the behavior in our devices. For models in which multiple parameters are unconstrained, a random numerical search is used to optimize the fit to experimental QE for SnS. To identify sources of error, we perform a sensitivity analysis by fitting with SCAPS-1D. Our analysis shows that changes in absorption most strongly affect estimates for μτ, highlighting the need to obtain accurate, device-specific absorption data. Further modeling and experimental constraints are required to obtain self-consistent values for μτ that correspond to actual device performance.

Enhanced radiation resistance of concentrator solar cell panels

Solar Energy ◽  
1966 ◽  
Vol 10 (2) ◽  
pp. 86-90 ◽  
Author(s):  
Arthur J. Krause ◽  
Robert R. Ferber
Keyword(s):  
Solar Cell ◽  
Radiation Resistance

Conductive layer protected and oxide catalyst-coated thin-film silicon solar cell as an efficient photoanode

2017 ◽  
Vol 7 (23) ◽  
pp. 5608-5613 ◽  
Author(s):  
Ning Wang ◽  
Min Liu ◽  
Junhui Liang ◽  
Tiantian Li ◽  
Hairen Tan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Carrier Mobility ◽  
Silicon Solar Cell ◽  
Oxide Catalyst ◽  
Conductive Layer ◽  
Visible Light Absorption ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Pec Water Splitting

Photovoltaic–photoelectrochemical (PV-PEC) water splitting based on silicon (Si) is very promising because of its broad visible light absorption, earth abundance and high carrier mobility.

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