Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure

Author(s):  
Vincenzo De Michele ◽  
Emmanuel Marin ◽  
Aziz Boukenter ◽  
Marco Cannas ◽  
Sylvain Girard ◽  
...  
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).


2020 ◽  
Vol 58 (1) ◽  
pp. 148-150
Author(s):  
E. V. Struleva ◽  
P. S. Komarov ◽  
S. A. Romashevskiy ◽  
M. A. Ovchinnikov ◽  
S. I. Ashitkov

2019 ◽  
Vol 5 (1) ◽  
pp. 34-45 ◽  
Author(s):  
Ulrike Brokmann ◽  
Tobias Milde ◽  
Edda Rädlein ◽  
Klaus Liefeith

Abstract The biocompatibility of photosensitive glasses allows various biomedical applications; one is the field of tissue engineering and more precisely microengineered tissue-on-a-chip platforms to study the tissue microenvironment and disease modelling. Three dimensional architectures of adapted components are required for modern materials. A photosensitive lithiumalumosilicate glass FS21 was investigated regarding the interaction with a Ti:Sapphire laser systemto build three dimensional buried channels inside the glass. Femtosecond laser radiation with a wavelength of 800 nm and pulse duration of 140 fs was used to modify the glass structure. Subsurface channel geometries were achieved by a subsequent thermal treatment and were formed into capillaries using wet chemical etching of the exposed and crystallised channels. Contrary to ultraviolet (UV) exposure, spectral optical investigations showed that fs laser exposure caused various radiation induced defects in the base glass coupled with the generation of photoelectrons for the photochemical modification of silver ions. We observed an outgassing of different species coming from raw materials of the original glass batch during the glass crystallisation process. Etch rate ratios differ between 1:25 and 1:45 and are dependent on: stoichiometric deviation between surface and bulk, crystal size and distribution and exchange of the etching agent in narrow capillaries.


2012 ◽  
Vol 100 (17) ◽  
pp. 173704 ◽  
Author(s):  
Hao He ◽  
Shaoyang Wang ◽  
Xun Li ◽  
Shiyang Li ◽  
Minglie Hu ◽  
...  

1990 ◽  
Vol 180 ◽  
Author(s):  
W.L. Warren ◽  
P.M. Lenahan ◽  
C.J. Brinker ◽  
C.S. Ashley

ABSTRACTWe have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm−1 D2 “defect” band attributed to cyclic trisiloxanes (3 membered rings). Our results indicate that strained silicon-oxygen bonds due to three membered rings are the dominant E΄ (trivalent silicon center) and paramagnetic oxygen center precursors at high irradiation doses for silicates containing large concentrations of the D2 species. These results directly demonstrate that atomic level stress does play a role in the radiation damage process of silicon dioxide.


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