Artificial Synapse Based on Back‐Gated MoS
            2
            Field‐Effect Transistor with High‐
            k
            Ta
            2
            O
            5
            Dielectrics

Neha Mohta; Roop K. Mech; Sooraj Sanjay; R. Muralidharan; Digbijoy N. Nath

doi:10.1002/pssa.202000254

Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics

physica status solidi (a) ◽

10.1002/pssa.202000254 ◽

2020 ◽

Vol 217 (19) ◽

pp. 2000254

Author(s):

Neha Mohta ◽

Roop K. Mech ◽

Sooraj Sanjay ◽

R. Muralidharan ◽

Digbijoy N. Nath

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Artificial Synapse ◽

High K ◽

Effect Transistor

Download Full-text

Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics

physica status solidi (a) ◽

10.1002/pssa.202070056 ◽

2020 ◽

Vol 217 (19) ◽

pp. 2070056

Author(s):

Neha Mohta ◽

Roop K. Mech ◽

Sooraj Sanjay ◽

R. Muralidharan ◽

Digbijoy N. Nath

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Artificial Synapse ◽

High K ◽

Effect Transistor

Download Full-text

Ferroelectric polymer-based artificial synapse for neuromorphic computing

Nanoscale Horizons ◽

10.1039/d0nh00559b ◽

2021 ◽

Author(s):

Sungjun Kim ◽

Keun Heo ◽

Sunghun Lee ◽

Seunghwan Seo ◽

Hyeongjun Kim ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Neuromorphic Computing ◽

Ferroelectric Polymer ◽

Artificial Synapse ◽

Effect Transistor

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.

Download Full-text

Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Results in Physics ◽

10.1016/j.rinp.2019.102823 ◽

2020 ◽

Vol 16 ◽

pp. 102823 ◽

Cited By ~ 2

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Electrical Characteristics ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

Download Full-text

Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Cited By ~ 1

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

Download Full-text

Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3006019 ◽

2008 ◽

Vol 26 (6) ◽

pp. 1887-1891 ◽

Cited By ~ 7

Author(s):

M. Ziaur Rahman Khan ◽

D. G. Hasko ◽

M. S. M. Saifullah ◽

M. E. Welland

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Sol Gel ◽

High K ◽

Effect Transistor ◽

High K Dielectric

Download Full-text

Characteristics Improvement of Silicon Nanowire Field Effect Transistor by using High-K Oxide Engineering

2019 4th International Conference on Electrical, Electronics, Communication, Computer Technologies and Optimization Techniques (ICEECCOT) ◽

10.1109/iceeccot46775.2019.9114823 ◽

2019 ◽

Author(s):

P. Vimala ◽

Manjunath Bassapuri ◽

Krishna Maheshwari

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

High K ◽

Effect Transistor

Download Full-text

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Applied Physics Letters ◽

10.1063/1.2890056 ◽

2008 ◽

Vol 92 (9) ◽

pp. 092901 ◽

Cited By ~ 147

Author(s):

P. D. Kirsch ◽

P. Sivasubramani ◽

J. Huang ◽

C. D. Young ◽

M. A. Quevedo-Lopez ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Dipole Model ◽

Metal Gate ◽

High K ◽

Effect Transistor ◽

Voltage Tuning

Download Full-text

Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Cited By ~ 1

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

Aided Design

Download Full-text

Device Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric

International Journal for Research in Applied Science and Engineering Technology ◽

10.22214/ijraset.2018.1257 ◽

2018 ◽

Vol 6 (1) ◽

pp. 1650-1690

Author(s):

M. K. Bera

Keyword(s):

Rare Earth ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Rare Earth Oxide ◽

Graphene Nanoribbon ◽

Device Performance ◽

High K ◽

Effect Transistor

Download Full-text

Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

Microelectronic Engineering ◽

10.1016/j.mee.2012.07.062 ◽

2012 ◽

Vol 98 ◽

pp. 343-346 ◽

Cited By ~ 7

Author(s):

Zongni Yao ◽

Weijie Sun ◽

Wuxia Li ◽

Haifang Yang ◽

Junjie Li ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Zno Nanowire ◽

High K ◽

Dual Gate ◽

Effect Transistor

Download Full-text