scholarly journals Evolution of Optical, Electrical, and Structural Properties of Indium Tungsten Oxide upon High Temperature Annealing

2020 ◽  
Vol 217 (18) ◽  
pp. 2000165
Author(s):  
Dorothee Menzel ◽  
Lars Korte
Keyword(s):  
High Temperature ◽  
Tungsten Oxide ◽  
Structural Properties ◽  
High Temperature Annealing

Coloring Changes of Congruent LiNbO3 Crystals under Redox Annealing

2015 ◽  
Vol 230 ◽  
pp. 228-232 ◽  
Author(s):  
Dmytro Yu. Sugak
Keyword(s):  
High Temperature ◽  
Lithium Niobate ◽  
Structural Properties ◽  
High Temperature Annealing ◽  
Lithium Niobate Crystals ◽  
Congruent Lithium Niobate

The paper is to discuss the main characteristics of the influence of high temperature annealing in different gas environments on the optical and structural properties of congruent lithium niobate crystals.

High-temperature annealing behavior of ion-implanted spinel single crystals

2004 ◽  
Vol 19 (12) ◽  
pp. 3463-3473 ◽  
Author(s):  
S.E. Enescu ◽  
L. Thomé ◽  
A. Gentils ◽  
T. Thomé
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Structural Properties ◽  
Nuclear Waste ◽  
Annealing Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Lattice Disorder ◽  
Cs Ions ◽  
Composition Changes

This paper reports modifications of the chemical and structural properties of MgAl2O4 single crystals implanted with Cs ions and submitted to high-temperature annealing. The composition changes, the damage created in the three sublattices (Al, Mg and O) of the crystals, and the behavior of implanted ions were studied by Rutherford backscattering and channeling experiments as a function of the Cs fluence and annealing temperature. The data show that annealing above 700–800 °C induces a huge modification of the stoichiometry of the material, a decrease of the lattice disorder, and an increase of the fraction of Cs atoms located in substitutional lattice sites. These results have to be taken into account for the future use of spinel as a matrix for the transmutation of nuclear waste.

Structural properties of Si nanoclusters produced by thermal annealing of SiOx films

2004 ◽  
Vol 817 ◽  
Author(s):  
Simona Boninelli ◽  
Fabio Iacona ◽  
Corrado Bongiorno ◽  
Corrado Spinella ◽  
Francesco Priolo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Quantitative Description ◽  
Dark Field ◽  
High Temperature Annealing ◽  
Transmission Electron

AbstractThe structural properties of Si nanoclusters embedded in SiO2, produced by high temperature annealing of SiOx films, have been investigated by energy filtered transmission electron microscopy. The presence of amorphous nanostructures, not detectable by using dark field transmission electron microscopy, has been demonstrated. By taking into account also this contribution, a quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the nanocluster mean radius and the density of amorphous and crystalline clusters have been determined as a function of the annealing temperature.

Influence of High-Temperature Annealing of the Textured Metal Ni–W Substrate on the Structural Properties of Seed Layer in HTS 2G tapes

2018 ◽  
Vol 119 (3) ◽  
pp. 267-271 ◽  
Author(s):  
M. Y. Chernykh ◽  
T. S. Krylova ◽  
I. V. Kulikov ◽  
I. A. Chernykh ◽  
M. L. Zanaveskin
Keyword(s):  
High Temperature ◽  
Structural Properties ◽  
Seed Layer ◽  
High Temperature Annealing

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

FERROPERM

Alloy Digest ◽  
1993 ◽  
Vol 42 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Physical Properties ◽  
Saturation Magnetization ◽  
Pure Iron ◽  
Magnetic Alloy ◽  
High Saturation Magnetization ◽  
High Temperature Annealing ◽  
Soft Magnetic ◽  
Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

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