scholarly journals Simultaneous Effect of Ultraviolet Radiation and Surface Modification on the Work Function and Hole Injection Properties of ZnO Thin Films

2020 ◽  
Vol 217 (5) ◽  
pp. 1900876
Author(s):  
Meysam Raoufi ◽  
Ulrich Hörmann ◽  
Giovanni Ligorio ◽  
Jana Hildebrandt ◽  
Michael Pätzel ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Ultraviolet Radiation ◽  
Work Function ◽  
Hole Injection ◽  
Zno Thin Films ◽  
Simultaneous Effect

The effect of crystallinity on the surface modification and optical properties of ZnO thin films

2020 ◽  
Vol 22 (4) ◽  
pp. 2010-2018 ◽  
Author(s):  
Muhammad Abiyyu Kenichi Purbayanto ◽  
Andrivo Rusydi ◽  
Yudi Darma
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Modification ◽  
Vital Role ◽  
Zno Thin Films ◽  
Zno Films ◽  
Structure Modification

The crystallinity of starting materials has a vital role in determining the structure modification and optical properties of ZnO films after H2 annealing.

Decrease in Work Function of Boron Ion-Implanted ZnO Thin Films

2007 ◽  
Vol 7 (11) ◽  
pp. 4021-4024 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Work Function ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Visible Wavelength Range ◽  
Ion Implanted

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA)time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.

Investigating Work Function Tunable Hole-Injection/Transport Layers of Electrodeposited Polycarbazole Network Thin Films

2004 ◽  
Vol 108 (49) ◽  
pp. 18949-18955 ◽  
Author(s):  
Akira Baba ◽  
Ken Onishi ◽  
Wolfgang Knoll ◽  
Rigoberto C. Advincula
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Hole Injection

Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids

2013 ◽  
Vol 102 (4) ◽  
pp. 041602 ◽  
Author(s):  
Josef W. Spalenka ◽  
Padma Gopalan ◽  
Howard E. Katz ◽  
Paul G. Evans
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Carboxylic Acids ◽  
Electron Mobility ◽  
Zno Thin Films

Work Function Effects of Nano Structured ZnO Thin Film on the Acetone Gas Sensitivity

2009 ◽  
Vol 1174 ◽  
Author(s):  
Seung Hyun Jee ◽  
Nitul Kakati ◽  
Soo Ho Kim ◽  
Dong-Joo Kim ◽  
Young Soo Yoon
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Work Function ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Gas Sensitivity ◽  
Nano Structures ◽  
Acetone Detection ◽  
Deposition Conditions

AbstractWe deposited various nano structured ZnO thin films with plasma treatment on an alumina substrate and fabricate ZnO sensors for acetone detection. The ZnO sensors with various nano structures and the plasma treatment were deposited by radio frequency (RF) magnetron sputtering method with RuO2 micro heater and Ru electrode. In order to control a work function intentionally, the various deposition conditions and the plasma treatment were used. Sensitivities of the ZnO sensor were measured in acetone vapor and air at 250 degree C. In conclusion, we suggested that the sensitivity of ZnO sensors for acetone strongly depends on the work function of the as-deposited or plasma treated nano structured ZnO thin films.

Surface modification of doped ZnO thin films

2010 ◽  
Vol 256 (18) ◽  
pp. 5606-5609 ◽  
Author(s):  
S. Flickyngerova ◽  
J. Skriniarova ◽  
M. Netrvalova ◽  
J. Kovac ◽  
I. Novotny ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Zno Thin Films ◽  
Doped Zno

Decrease in Work Function of Transparent Conducting ZnO Thin Films by Phosphorus Ion Implantation

2008 ◽  
Vol 8 (9) ◽  
pp. 4877-4880 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Oxygen Vacancies ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Free Electrons ◽  
Electrical And Optical Properties ◽  
Transparent Conducting ◽  
Visible Wavelength Range

To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

Nanocrystalline ZnO Film Layer on Silicon and its Application to Surface Acoustic Wave-Based Streaming

2008 ◽  
Vol 8 (9) ◽  
pp. 4626-4629 ◽  
Author(s):  
Dae-Sik Lee ◽  
Jikui Luo ◽  
Yongqing Fu ◽  
William I Milne ◽  
Nae-Man Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Hydrophobic Surface ◽  
Zno Thin Films ◽  
Average Roughness ◽  
Axis Orientation ◽  
Film Layer ◽  
20 Nm

A surface acoustic wave (SAW) device consisting of 1∼6 μm-thick ZnO thin films deposited on Si wafer was designed, fabricated, and characterized in this study. Photolithographic protocols for interdigitated transducers (IDTs) and surface modification using fluoroalkylsilane are employed with the aim of droplet-based microfluidic actuations in bio-microsystems. A ZnO thin film was grown on a 4′ silicon wafer with c-axis orientation, an average roughness of 11.6 nm, and a small grain size of 20 nm. It was found that the resonant frequencies (Rayleigh and Sezawa modes) of SAW devices move to a lower frequency range as the thickness of the ZnO thin films increases. Through the silane surface modification, a hydrophobic surface with a contact angle of 114° was obtained. Finally, liquid streaming by acoustic wave was demonstrated by observing the actuation of SiO2 microparticles in a microfluidic drop.

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