The effect of crystallinity on the surface modification and optical properties of ZnO thin films

2020 ◽  
Vol 22 (4) ◽  
pp. 2010-2018 ◽  
Author(s):  
Muhammad Abiyyu Kenichi Purbayanto ◽  
Andrivo Rusydi ◽  
Yudi Darma
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Modification ◽  
Vital Role ◽  
Zno Thin Films ◽  
Zno Films ◽  
Structure Modification

The crystallinity of starting materials has a vital role in determining the structure modification and optical properties of ZnO films after H2 annealing.

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

Plasma-Assisted MOCVD Growth of ZnO Thin Films

2005 ◽  
Vol 892 ◽  
Author(s):  
Maria Losurdo ◽  
Maria Michela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mocvd Growth ◽  
Metalorganic Chemical

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

scholarly journals Influence of thickness on the optical properties of Sb doped ZnO thin films

2014 ◽  
Vol 38 (1) ◽  
pp. 93-96
Author(s):  
E Hoq ◽  
MRA Bhuiyan ◽  
J Begum
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Zno Thin Films ◽  
Zno Films ◽  
Thermal Evaporation Method ◽  
Doped Zno ◽  
High Absorption Coefficient ◽  
Academy Of Sciences ◽  
High Absorption

Sb doped ZnO thin films having various thicknesses have been prepared onto glass substrate by using thermal evaporation method. The atomic compositions of the grown films have been determined by Energy Dispersive Analysis of X-ray (EDAX) method. The optical properties were measured by using a UV-VIS-NIR spectrophotometer (300 to 2500 nm). The EDAX analysis revealed that Sb is doped into the ZnO films. Optical properties showed high absorption coefficient (~105/cm) that direct allowed transition band gap. The optical band gap of the ZnO thin films became reduced due to the doping of Sb. DOI: http://dx.doi.org/10.3329/jbas.v38i1.20217 Journal of Bangladesh Academy of Sciences, Vol. 38, No. 1, 93-96, 2014

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

scholarly journals Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)

2019 ◽  
Vol 15 (32) ◽  
pp. 114-121
Author(s):  
Maysar A. Salim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Energy Gap ◽  
Transparent Conducting Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Optical Energy Gap

Zinc Oxide (ZnO) thin films of different thickness were preparedon ultrasonically cleaned corning glass substrate, by pulsed laserdeposition technique (PLD) at room temperature. Since mostapplication of ZnO thin film are certainly related to its opticalproperties, so the optical properties of ZnO thin film in thewavelength range (300-1100) nm were studied, it was observed thatall ZnO films have high transmittance (˃ 80 %) in the wavelengthregion (400-1100) nm and it increase as the film thickness increase,using the optical transmittance to calculate optical energy gap (Egopt)show that (Egopt) of a direct allowed transition and its value nearlyconstant (~ 3.2 eV) for all film thickness (150, 180, 210, and 240)nm, so Zn0 thin films were used as a transparent conducting oxide(TCO) in various optoelectronic application such as a window in athin film solar cells.

The Structural Characterization and Optical Properties of Zinc Oxide Films Synthesized by Electrochemistry Method

2013 ◽  
Vol 743-744 ◽  
pp. 926-931
Author(s):  
Jing Xia Zheng ◽  
Xing Guo Zhao ◽  
Wei Liang ◽  
Jin Bo Xue
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrolyte Concentration ◽  
Hexagonal Wurtzite Structure ◽  
Zinc Nitrate ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Ito Glass ◽  
The Matrix

Flaky ZnO thin films were electrodeposited from an aqueous solution of zinc nitrate (Zn (NO3)2) as electrolyte on ITO glass substrate by cathodic reduction method The effect of electrolyte concentration on the structure, morphology and optical properties of ZnO thin films were studied by X-ray diffraction, scanning electron microscopy and UV-Vis spectrometer. The results show that the ZnO films are of hexagonal wurtzite structure; When the concentration of Zn (NO3)2 solution is 0.24 M, the sparse flaky ZnO thin films were prepared and the thickness and length of ZnO flaky are about 50 nm and 1~3 μm, respectively; When the electrolyte concentration is 0.16 M, hexagonal and triangular structures are observed and some lathy and conical ZnO structure start to appear; When the concentration of Zn (NO3)2 solution drops to 0.08 M, the matrix of films is still flaky ZnO, but porous structures among the flaky structures appear and the size of conical ZnO has changed, whose bottom diameter reaches 1~3 μm and length is 2~4 μm; UV-Vis absorption test results indicate the absorption peak and the bandgap of the prepared ZnO thin films are about 350 nm and 3.28 eV, respectively.

Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films

2006 ◽  
Vol 21 (7) ◽  
pp. 1632-1637 ◽  
Author(s):  
Maria Losurdo ◽  
Maria M. Giangregorio ◽  
A. Sacchetti ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Thin Films ◽  
Zno Films ◽  
Chemical Vapor Deposition Growth ◽  
Metalorganic Chemical

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2·N,N,N′,N′-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function.

scholarly journals Compositional, Structural, Morphological, and Optical Properties of ZnO Thin Films Prepared by PECVD Technique

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 202
Author(s):  
Noureddine Hacini ◽  
Mostefa Ghamnia ◽  
Mohamed Amine Dahamni ◽  
Abdelwaheb Boukhachem ◽  
Jean-Jacques Pireaux ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Zno Films ◽  
Textured Surfaces ◽  
Xps Spectra ◽  
X Ray

ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples were prepared at substrates temperatures of 200, 300, and 400 °C. The surface chemical composition was analyzed by the use of X-Ray Photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical properties were carried out by UV-visible spectroscopy. XPS spectra showed typical peaks of Zn(2p3/2), Zn(2p1/2), and O(1s) of ZnO with a slight shift attributed to the substrate temperature. XRD analysis revealed hexagonal wurtzite phases with a preferred (002) growth orientation that improved with temperature. Calculation of grain size and dislocation density revealed the crystallization improvement of ZnO when the substrate temperature varied from 200 to 400 °C. SEM images of ZnO films showed textured surfaces composed of grains of spherical shape uniformly distributed. The transmittance yields are reaching 80%, and the values of the band-gap energy indicate that the ZnO films prepared by PECVD present transparent and semiconducting properties.

scholarly journals Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

2015 ◽  
Vol 33 (3) ◽  
pp. 491-496 ◽  
Author(s):  
Y. Larbah ◽  
M. Adnane ◽  
T. Sahraoui
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Zno Thin Films ◽  
Effect Of Temperature ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Substrate Temperatures

Abstract Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 °C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.

scholarly journals The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

Open Physics ◽  
2016 ◽  
Vol 14 (1) ◽  
pp. 714-720 ◽  
Author(s):  
Said Benramache ◽  
Boubaker Benhaoua
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Deposition ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Zno Films ◽  
Gap Energy ◽  
Optical Gap ◽  
Optical Gap Energy ◽  
Doped Zno

AbstractIn this paper, a new mathematical model has been developed to calculate the optical properties of nano materials a function of their size and structure. ZnO has good characterizatics in optical, electrical, and structural crystallisation; We will demonstrate that the direct optical gap energy of ZnO films grown by US and SP spray deposition can be calculated by investigating the correlation between solution molarity, doping levels of doped films and their Urbache energy. A simulation model has been developed to calculate the optical band gap energy of undoped and Bi, Sn and Fe doped ZnO thin films. The measurements by thus proposed models are in agreement with experimental data, with high correlation coefficients in the range 0.94-0.99. The maximum calculated enhancement of the optical gap energy of Sn doped ZnO thin films is always higher than the enhancement attainable with an Fe doped film, where the minimum error was found for Bi and Sn doped ZnO thin films to be 2,345 and 3,072%, respectively. The decrease in the relative errors from undoped to doped films can be explained by the good optical properties which can be observed in the fewer number of defects as well as less disorder.

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