scholarly journals The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

2019 ◽  
Vol 217 (7) ◽  
pp. 1900762 ◽  
Author(s):  
Nicolò Zagni ◽  
Alessandro Chini ◽  
Francesco Maria Puglisi ◽  
Paolo Pavan ◽  
Giovanni Verzellesi
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Carbon Doping ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse

Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors

2012 ◽  
Vol 101 (24) ◽  
pp. 243506 ◽  
Author(s):  
Sandeepan DasGupta ◽  
Laura B. Biedermann ◽  
Min Sun ◽  
Robert Kaplar ◽  
Matthew Marinella ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Barrier Structure ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

2001 ◽  
Vol 37 (10) ◽  
pp. 661 ◽  
Author(s):  
P.B. Klein ◽  
S.C. Binari ◽  
K. Ikossi-Anastasiou ◽  
A.E. Wickenden ◽  
D.D. Koleske ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse
Sign in / Sign up

Export Citation Format

Share Document