Nano‐Graphite Clusters Regulation for Reliability Improvement of Amorphous Carbon‐Based Resistive Random Access Memory

2019 ◽  
Vol 216 (20) ◽  
pp. 1900278
Author(s):  
Ye Tao ◽  
Peng Zhao ◽  
Ye Li
Keyword(s):  
Amorphous Carbon ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Reliability Improvement ◽  
Carbon Based

Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory

2017 ◽  
Vol 38 (4) ◽  
pp. 453-456 ◽  
Author(s):  
Wen-Chung Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Hsin-Lu Chen ◽  
Chih-Cheng Shih ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

2014 ◽  
Vol 9 (1) ◽  
pp. 52 ◽  
Author(s):  
Yi-Jiun Chen ◽  
Hsin-Lu Chen ◽  
Tai-Fa Young ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Redox Mechanism

Forming-Free Cu-Doped Amorphous-Carbon-Oxide Based Resistive-Random-Access-Memory and Memory Operation Mechanism

2020 ◽  
Vol MA2020-02 (31) ◽  
pp. 2044-2044
Author(s):  
Soo-Min Jin ◽  
Ki-Hyun Kwon ◽  
Dong Won Kim ◽  
Heajee Kim ◽  
Dae-Seong Woo ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Random Access ◽  
Carbon Oxide ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Operation Mechanism

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory

2021 ◽  
Vol 23 (10) ◽  
pp. 5975-5983
Author(s):  
Jie Hou ◽  
Rui Guo ◽  
Jie Su ◽  
Yawei Du ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Low Resistance ◽  
Multilevel Storage

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

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