Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure

2019 ◽  
Vol 216 (16) ◽  
pp. 1900059
Author(s):  
Zhibai Zhong ◽  
Xuanli Zheng ◽  
Jinchai Li ◽  
Jinjian Zheng ◽  
Yashu Zang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Voltage ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Analysis of the Light-Extraction Efficiency of Flip-Chip Deep-Ultraviolet Light-Emitting Diodes with Embedded Photonic Crystals

2021 ◽  
Vol 16 (4) ◽  
pp. 591-596
Author(s):  
Meng Liu ◽  
Xuan Zheng ◽  
Wenfei Liu ◽  
Juan Li ◽  
Wenjing Wang ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

In the present study, embedded photonic crystals were introduced into the p-GaN contact layer of light-emitting diodes to increase the light-extraction efficiency of flip-chip deep-ultraviolet light-emitting diodes. As demonstrated by performing three-dimensional finite-difference time domain simulation, the embedded photonic crystals could be designed to increase the total reflectivity on the p-GaN contact layer, thereby increasing the light-extraction efficiency. In addition, the effects of the embedded photonic crystals configurations on the light-extraction efficiency of deep-ultraviolet light-emitting diodes were examined. Light-extraction efficiency over 21% for transverse magnetic polarized emission could be generally expected by rigorously optimizing the active layer position, as well as the depth, period, and filling factor of photonic crystals. Moreover, an investigation was conducted on the light-extraction efficiency over the whole ultraviolet spectrum, and more light-extraction efficiency harvest on a broadband ultraviolet spectrum has been achieved as compared with flip-chip planar deep-ultraviolet light-emitting diodes. The optimized structure will be promising for increasing the light-extraction efficiency of AlGaN-based flip-chip deep-ultraviolet light-emitting diodes.

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

2005 ◽  
Vol 86 (20) ◽  
pp. 201109 ◽  
Author(s):  
M. Shatalov ◽  
A. Chitnis ◽  
P. Yadav ◽  
Md. F. Hasan ◽  
J. Khan ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes

2021 ◽  
Author(s):  
Andreas Liudi Mulyo ◽  
Anjan Mukherjee ◽  
Ida Marie Høiaas ◽  
Lyubomir Ahtapodov ◽  
Tron Arne Nilsen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Transparent Conducting ◽  
Ultraviolet Light Emitting Diodes
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