Formation of High-Pressure Phase of Titanium Dioxide (TiO2 -II) Thin Films by Vapor-Liquid-Solid Growth Process on GaAs Substrate

2018 ◽  
Vol 216 (2) ◽  
pp. 1800640 ◽  
Author(s):  
Anindita Das ◽  
Basudev Nag Chowdhury ◽  
Rajib Saha ◽  
Subhrajit Sikdar ◽  
Jenifar Sultana ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Titanium Dioxide ◽  
Gaas Substrate ◽  
Growth Process ◽  
High Pressure Phase ◽  
Vapor Liquid Solid ◽  
Pressure Phase ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Fabrication of high-Tc LaBa2Cu3Oy thin films with vapor–liquid–solid growth mode

2003 ◽  
Vol 392-396 ◽  
pp. 1286-1290 ◽  
Author(s):  
Y. Ichino ◽  
K. Sudoh ◽  
Y. Yoshida ◽  
Y. Takai
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Vapor Liquid Solid ◽  
High Tc ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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