scholarly journals Coherence Properties and Quantum Control of Silicon Vacancy Color Centers in Diamond

2017 ◽  
Vol 214 (11) ◽  
pp. 1700586 ◽  
Author(s):  
Jonas Nils Becker ◽  
Christoph Becher
Keyword(s):  
Quantum Control ◽  
Color Centers ◽  
Silicon Vacancy

scholarly journals Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

2021 ◽  
Vol 218 (19) ◽  
pp. 2170054
Author(s):  
Konosuke Shimazaki ◽  
Hiroki Kawaguchi ◽  
Hideaki Takashima ◽  
Takuya Fabian Segawa ◽  
Frederick T.-K. So ◽  
...  
Keyword(s):  
High Temperature ◽  
Detonation Nanodiamonds ◽  
Color Centers ◽  
High Temperature Annealing ◽  
Silicon Vacancy

Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

2021 ◽  
Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Silicon Doped ◽  
The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Exploring ultrafast single-photon emission of silicon-vacancy color centers in diamond nano-membranes coupled with gold nano-cones

2019 ◽  
Author(s):  
Haritha Kambalathmana ◽  
Assegid Mengistu Flatae ◽  
Stefano Lagomarsino ◽  
Hossam Galal ◽  
Francesco Tantussi ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Color Centers ◽  
Single Photon Emission ◽  
Silicon Vacancy

Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane

2019 ◽  
Vol 125 (7) ◽  
Author(s):  
E. J. Di Liscia ◽  
M. Reinoso ◽  
F. Álvarez ◽  
H. Huck
Keyword(s):  
Color Centers ◽  
Silicon Vacancy

2D inverse periodic opal structures in single crystal diamond with incorporated silicon-vacancy color centers

2017 ◽  
Vol 73 ◽  
pp. 204-209 ◽  
Author(s):  
Bing Dai ◽  
Guoyang Shu ◽  
Victor Ralchenko ◽  
Andrey Bolshakov ◽  
Dmitry Sovyk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

Low Strain Silicon-Vacancy Color Centers in Diamond Nanopillar Arrays

2016 ◽  
Author(s):  
Jingyuan Linda Zhang ◽  
Hitoshi Ishiwata ◽  
Thomas M. Babinec ◽  
Marina Radulaski ◽  
Kai Müller ◽  
...  
Keyword(s):  
Color Centers ◽  
Silicon Vacancy ◽  
Nanopillar Arrays
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