Exploring ultrafast single-photon emission of silicon-vacancy color centers in diamond nano-membranes coupled with gold nano-cones

2019 ◽  
Author(s):  
Haritha Kambalathmana ◽  
Assegid Mengistu Flatae ◽  
Stefano Lagomarsino ◽  
Hossam Galal ◽  
Francesco Tantussi ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Color Centers ◽  
Single Photon Emission ◽  
Silicon Vacancy

scholarly journals Single-photon emission from Ni-related color centers in CVD diamond

2010 ◽  
Author(s):  
David Steinmetz ◽  
Elke Neu ◽  
Christian Hepp ◽  
Roland Albrecht ◽  
Wolfgang Bolse ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Cvd Diamond ◽  
Color Centers ◽  
Single Photon Emission

scholarly journals Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium

2011 ◽  
Vol 13 (2) ◽  
pp. 025012 ◽  
Author(s):  
Elke Neu ◽  
David Steinmetz ◽  
Janine Riedrich-Möller ◽  
Stefan Gsell ◽  
Martin Fischer ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Single Photon ◽  
Photon Emission ◽  
Chemical Vapour ◽  
Single Photon Emission ◽  
Colour Centres ◽  
Silicon Vacancy

scholarly journals Electrical charge state identification and control for the silicon vacancy in 4H-SiC

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
M. E. Bathen ◽  
A. Galeckas ◽  
J. Müting ◽  
H. M. Ayedh ◽  
U. Grossner ◽  
...  
Keyword(s):  
Charge State ◽  
Electric Fields ◽  
Single Photon ◽  
Photon Emission ◽  
State Transitions ◽  
Single Photon Emission ◽  
Electrical Measurements ◽  
Complete Control ◽  
Silicon Vacancy ◽  
External Bias

AbstractReliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ($${V}_{{\rm{Si}}}$$VSi) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from $${V}_{{\rm{Si}}}$$VSi defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost $$50 \%$$50% via application of external bias. Furthermore, we identify charge state transitions of $${V}_{{\rm{Si}}}$$VSi by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1′ emission line state of $${V}_{{\rm{Si}}}$$VSi at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, $${V}_{{\rm{Si}}}$$VSi defect ensembles in 4H-SiC highly suitable for quantum applications.

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