In2 O3 -Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

2018 ◽  
Vol 215 (7) ◽  
pp. 1700506 ◽  
Author(s):  
Takashi Koida ◽  
Yuko Ueno ◽  
Hajime Shibata
Keyword(s):  
Electron Mobility ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
High Electron ◽  
High Electron Mobility ◽  
Transparent Conducting

Current status of transparent conducting oxide layers with high electron mobility and their application in Cu(In,Ga)Se2 mini-modules

2019 ◽  
Vol 673 ◽  
pp. 26-33 ◽  
Author(s):  
Takashi Koida ◽  
Yuko Ueno ◽  
Jiro Nishinaga ◽  
Yukiko Kamikawa ◽  
Hirofumi Higuchi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Transparent Conducting Oxide ◽  
Current Status ◽  
High Electron ◽  
High Electron Mobility ◽  
Oxide Layers ◽  
Transparent Conducting

scholarly journals In2O3-based Transparent Conductive Oxide Films with High Electron Mobility

Hyomen Kagaku ◽  
2008 ◽  
Vol 29 (1) ◽  
pp. 18-24
Author(s):  
Takashi KOIDA ◽  
Hiroyuki FUJIWARA ◽  
Michio KONDO
Keyword(s):  
Electron Mobility ◽  
Oxide Films ◽  
Transparent Conductive Oxide ◽  
High Electron ◽  
High Electron Mobility ◽  
Conductive Oxide

scholarly journals Deposition of high-electron-mobility transparent conducting zinc oxide thin films by DC magnetron sputtering in gas mixture of argon and hydrogen

2015 ◽  
Vol 18 (3) ◽  
pp. 162-169
Author(s):  
Hanh Thi Duc Dinh ◽  
Dung Van Hoang ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electron Mobility ◽  
Zno Films ◽  
Gas Mixture ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
High Electron Mobility ◽  
Transparent Conducting ◽  
The One

Transparent conducting zinc oxide thin films having high electron-mobility are deposited on glass substrates by DC magnetron sputtering in gas mixture of argon and hydrogen at room temperature. Introducing a little amount of hydrogen gas into sputtering Ar gas can remarkedly improve the electron mobility in ZnO thin films. With gas flow rate ratios of hydrogen to argon range from 7.2 % to 19.2 %, ZnO films with hydrogen (ZnO:H) have stable and low resistivity of 6.6×10-4 Ω.cm. At H2/Ar flow rate ratio 7.2 %, electron Hall mobility in ZnO:H film reaches a maximum value of 61 cm2.V-1.s-1. This value is much higher than the one of 23 cm2.V-1.s-1 in pure ZnO films under the same deposition condition. Morever, electron density of 1.51020 cm-3 in ZnO:H films is also higher than the one of 6×1019 cm-3 in pure ZnO films. XRD and FESEM show that the average crystallinegrain size in ZnO:H films are larger than the one in pure ZnO films. The 600-nm-thick ZnO:H films (substrate included) have average transmission of 83 % in the wide wavelength range of 380-1100 nm and low sheet resistance of 11 /square.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Polymer Crystals: Approaching Crystal Structure and High Electron Mobility in Conjugated Polymer Crystals (Adv. Mater. 10/2021)

2021 ◽  
Vol 33 (10) ◽  
pp. 2170075
Author(s):  
Ze‐Fan Yao ◽  
Yu‐Qing Zheng ◽  
Jin‐Hu Dou ◽  
Yang Lu ◽  
Yi‐Fan Ding ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Mobility ◽  
Conjugated Polymer ◽  
High Electron ◽  
High Electron Mobility ◽  
Polymer Crystals
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