scholarly journals Deposition of high-electron-mobility transparent conducting zinc oxide thin films by DC magnetron sputtering in gas mixture of argon and hydrogen

2015 ◽  
Vol 18 (3) ◽  
pp. 162-169
Author(s):  
Hanh Thi Duc Dinh ◽  
Dung Van Hoang ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electron Mobility ◽  
Zno Films ◽  
Gas Mixture ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
High Electron Mobility ◽  
Transparent Conducting ◽  
The One

Transparent conducting zinc oxide thin films having high electron-mobility are deposited on glass substrates by DC magnetron sputtering in gas mixture of argon and hydrogen at room temperature. Introducing a little amount of hydrogen gas into sputtering Ar gas can remarkedly improve the electron mobility in ZnO thin films. With gas flow rate ratios of hydrogen to argon range from 7.2 % to 19.2 %, ZnO films with hydrogen (ZnO:H) have stable and low resistivity of 6.6×10-4 Ω.cm. At H2/Ar flow rate ratio 7.2 %, electron Hall mobility in ZnO:H film reaches a maximum value of 61 cm2.V-1.s-1. This value is much higher than the one of 23 cm2.V-1.s-1 in pure ZnO films under the same deposition condition. Morever, electron density of 1.51020 cm-3 in ZnO:H films is also higher than the one of 6×1019 cm-3 in pure ZnO films. XRD and FESEM show that the average crystallinegrain size in ZnO:H films are larger than the one in pure ZnO films. The 600-nm-thick ZnO:H films (substrate included) have average transmission of 83 % in the wide wavelength range of 380-1100 nm and low sheet resistance of 11 /square.

scholarly journals DEPOSITION OF HIGH-ELECTRON-MOBILITY TRANSPARENT CONDUCTING ALUMINUM-DOPED ZINC OXIDE THIN FILMS BY DC MAGNETRON SPUTTERING

2018 ◽  
Vol 54 (1A) ◽  
pp. 160
Author(s):  
Hoang Van Dung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electron Mobility ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Substrate Temperatures

Transparent conducting Al-doped ZnO (AZO) thin films were deposited on glass substrates by DC magnetron sputtering from AZO ceramic target (0.75 %wt Al2O3) in gas mixture of (Ar + H2) at different substrate temperatures. At value of 1.7 % of ratio of H2 to (H2+Ar) and at substrate temperature of 200 oC, electron mobility in obtained AZO films is 60.2 cm2.V-1.s-1, which is much larger than 34.6 cm2.V-1.s-1 of films fabricated in the same condition without H2. AZO films also have a low resistivity of 2.53×10-4 Ω.cm, low sheet resistance of 2.5 Ω/□ and high average transmittance above 80 % in the wavelength range of 400 – 1100 nm.

High Electron Mobility of Amorphous Red Phosphorus Thin Films

2019 ◽  
Vol 58 (20) ◽  
pp. 6766-6771 ◽  
Author(s):  
Pedro E. M. Amaral ◽  
Glen P. Nieman ◽  
Gregory R. Schwenk ◽  
Hao Jing ◽  
Raymond Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
High Electron ◽  
Red Phosphorus ◽  
High Electron Mobility

High Electron Mobility of Amorphous Red Phosphorus Thin Films

2019 ◽  
Vol 131 (20) ◽  
pp. 6838-6843
Author(s):  
Pedro E. M. Amaral ◽  
Glen P. Nieman ◽  
Gregory R. Schwenk ◽  
Hao Jing ◽  
Raymond Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
High Electron ◽  
Red Phosphorus ◽  
High Electron Mobility

scholarly journals High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature

2015 ◽  
Vol 10 (1) ◽  
Author(s):  
Nurul Azzyaty Jayah ◽  
Hafizal Yahaya ◽  
Mohamad Rusop Mahmood ◽  
Tomoaki Terasako ◽  
Kanji Yasui ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Zno Thin Films ◽  
High Electron ◽  
High Electron Mobility

Effect of Molarity of Precursor Solution on Nanocrystalline Zinc Oxide Thin Films

2009 ◽  
Vol 293 ◽  
pp. 99-105 ◽  
Author(s):  
Girjesh Singh ◽  
S.B. Shrivastava ◽  
Deepti Jain ◽  
Swati Pandya ◽  
V. Ganesan
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Zno Films ◽  
Scale Production ◽  
Transparent Conducting ◽  
Wide Range

During the last two decades, the use of transparent conducting films of non-stoichiometric and doped metallic oxides for the conversion of solar energy into electrical energy has assumed great significance. A variety of materials, using various deposition techniques, has been tried for this purpose [1-3]. Among these various materials, zinc oxide (ZnO) is one of the prominent oxide semiconductors suitable for photovoltaic applications because of its high electrical conductivity and optical transmittance in the visible region of the solar spectrum [4]. Furthermore, thin films of ZnO have shown good chemical stability against hydrogen plasma, which is of prime importance in a-Si:H-based solar-cell fabrication. Thus, zinc oxide can serve as a good candidate for replacing SnO2 and indium tin oxide (ITO) films in Si:H-based solar cells. One of the outstanding features of ZnO is its large excitonic binding energy, i.e. 60meV, leading to the existence of excitons at room temperature and even at higher temperatures [5-8]. These unique characteristics have generated a wide range of applications of ZnO. For example, gas sensors [9], surface acoustic devices [10], transparent electrodes and solar cells. Many techniques are used for preparing the transparent conducting ZnO films, such as RF sputtering [11], evaporation [12], chemical vapour deposition [13], ion beam sputtering [14] and spray pyrolysis [15–18]. Among these, the spray pyrolysis technique has attracted considerable attention due to its simplicity and large-scale production combined with low-cost fabrication. By using this technique, one can produce large-area coatings without any need for ultra-high vacuum. Thus, the capital cost and the production cost of high-quality zinc oxide semiconductor thin films are lowest among all other techniques. In the present work, we have synthesized ZnO films by using the spray pyrolysis technique. A number of films have been prepared by changing the molarity of the precursor solution. The prepared films have been characterized with regard to their structural, morphological and electrical properties.

Current status of transparent conducting oxide layers with high electron mobility and their application in Cu(In,Ga)Se2 mini-modules

2019 ◽  
Vol 673 ◽  
pp. 26-33 ◽  
Author(s):  
Takashi Koida ◽  
Yuko Ueno ◽  
Jiro Nishinaga ◽  
Yukiko Kamikawa ◽  
Hirofumi Higuchi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Transparent Conducting Oxide ◽  
Current Status ◽  
High Electron ◽  
High Electron Mobility ◽  
Oxide Layers ◽  
Transparent Conducting
Sign in / Sign up

Export Citation Format

Share Document