The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

2015 ◽  
Vol 212 (12) ◽  
pp. 2785-2790 ◽  
Author(s):  
Woochool Jang ◽  
Heeyoung Jeon ◽  
Hyoseok Song ◽  
Honggi Kim ◽  
Jingyu Park ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Power

Low-temperature hydrolysis (oxidation) of plasma-deposited silicon nitride films

1989 ◽  
Vol 1 (2) ◽  
pp. 194-198 ◽  
Author(s):  
J. N. Chiang ◽  
S. G. Ghanayem ◽  
D. W. Hess
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films

Low temperature densification of silicon nitride nanoglasses

1993 ◽  
Vol 3 (1-6) ◽  
pp. 518
Author(s):  
A. Pechenik ◽  
G.J. Piermarini ◽  
S.C. Danforth
Keyword(s):  
Silicon Nitride ◽  
Low Temperature

scholarly journals Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires

2001 ◽  
Vol 79 (4) ◽  
pp. 494-496 ◽  
Author(s):  
Shin Yokoyama ◽  
Kenji Ohba ◽  
Kensaku Kawamura ◽  
Toshiro Kidera ◽  
Anri Nakajima
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Selective Deposition

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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