Incorporation of nitrogen into polycrystalline diamond surfaces by RF plasma nitridation process at different temperatures: Bonding configuration and thermal stabilty studies byin situXPS and HREELS

2015 ◽  
Vol 212 (11) ◽  
pp. 2487-2495 ◽  
Author(s):  
Maneesh Chandran ◽  
Michal Shasha ◽  
Shaul Michaelson ◽  
Rozalia Akhvlediani ◽  
Alon Hoffman
Keyword(s):  
Polycrystalline Diamond ◽  
Rf Plasma ◽  
Diamond Surfaces ◽  
Plasma Nitridation ◽  
Nitridation Process ◽  
Bonding Configuration ◽  
Different Temperatures

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Plasma nitridation process for the fabrication of all‐refractory Josephson junctions

1990 ◽  
Vol 67 (6) ◽  
pp. 3038-3042 ◽  
Author(s):  
R. Cantor ◽  
D. Drung ◽  
M. Peters ◽  
H. Koch
Keyword(s):  
Josephson Junctions ◽  
Plasma Nitridation ◽  
Nitridation Process

Study on Nitridation of Silicon Added With Amorphous Silicon Nitride

2011 ◽  
Author(s):  
Yanhui Li ◽  
Li Wang ◽  
Shaowu Yin ◽  
Fuming Yang ◽  
Chuanping Liu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Early Stage ◽  
Conversion Ratio ◽  
Amorphous Silicon Nitride ◽  
Nitridation Process ◽  
Silicon Nitride Powder ◽  
Different Temperatures ◽  
Direct Nitridation ◽  
The Relationship

The direct nitridation process of silicon added with amorphous silicon nitride powder at atmospheric pressure was investigated and the product was analyzed by XRD and SEM. Based on the relationship between the conversion ratio of silicon and the reaction time at different temperatures, a physical and mathematical model was derived to describe the nitridation process of silicon particles. The results showed that the conversion ratio of silicon increased rapidly at the early stage of reaction. And the reaction would be accelerated by reducing the size of silicon particle and increasing the pressure of N2. At the range of experimental temperature, the conversion ratio of silicon increases with improving temperature.

scholarly journals Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

2007 ◽  
Vol 1039 ◽  
Author(s):  
Ken Haenen ◽  
Andrada Lazea ◽  
Vincent Mortet ◽  
Jan D'Haen ◽  
Peter Geithner ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Diamond Surfaces ◽  
Cvd Growth ◽  
Oriented Polycrystalline ◽  
Electron Back Scattered Diffraction

AbstractPhosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

The Improvement Effect of the Plasma Nitridation Process to the Reliability of HfO2 Thin Films

2019 ◽  
Vol 19 (2) ◽  
pp. 773-784
Author(s):  
Kow-Ming Chang ◽  
Bwo-Ning Chen ◽  
Chun-Kai Tang
Keyword(s):  
Thin Films ◽  
Plasma Nitridation ◽  
Nitridation Process ◽  
Improvement Effect
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