scholarly journals Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

2013 ◽  
Vol 211 (1) ◽  
pp. 40-47 ◽  
Author(s):  
Daniel Splith ◽  
Stefan Müller ◽  
Florian Schmidt ◽  
Holger von Wenckstern ◽  
Johan Janse van Rensburg ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Barrier Height ◽  
Pulsed Laser ◽  
Schottky Contacts ◽  
Laser Deposition ◽  
The Mean

Magnetite/Nickel andMagnetite/Cobalt Multilayer Nanostructures Obtained by Pulsed Laser Deposition

2003 ◽  
Vol 777 ◽  
Author(s):  
Monica Sorescu ◽  
Agnieszka Grabias ◽  
Lucian Diamandescu
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Multilayer Nanostructures ◽  
Mean Grain Size ◽  
Different Temperatures ◽  
The Mean ◽  
Metal Layers ◽  
Magnetite Phase

AbstractNanostructured magnetite/T multilayers, with T = Ni, Co, Cr, have been prepared by pulsed laser deposition. The thickness of individual magnetite and metal layers takes values in the range of 5 - 40 nm with a total multilayer thickness of 100 -120 nm. X-ray diffraction has been used to study the phase characteristics as a function of thermal treatment up to 550 °C. Small amounts of maghemite and hematite were identified together with prevailing magnetite phase after treatments at different temperatures. The mean grain size of magnetite phase increases with temperature from 12 nm at room temperature to 54 nm at 550 °C. The thermal behavior of magnetite in multilayers in comparison with powder magnetite is discussed.

Determination of limits in deposition of adhering a-C films on silicon produced by pulsed laser deposition

1995 ◽  
Vol 263 (2) ◽  
pp. 198-202 ◽  
Author(s):  
T. Zehnder ◽  
J. Balmer ◽  
W. Lüthy ◽  
H.P. Weber
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

ZnO-based MESFET Devices

2009 ◽  
Vol 1201 ◽  
Author(s):  
Marius Grundmann ◽  
Heiko Frenzel ◽  
Alexander Lajn ◽  
Holger von Wenckstern ◽  
Friedrich Schein ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxides ◽  
Pulsed Laser Deposition ◽  
Barrier Height ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gate Electrode ◽  
Voltage Swing

AbstractWe present transistors and inverters based on the MESFET principle. The channel consists of thin ZnO:Mg thin films on sapphire, deposited with pulsed laser deposition. The ohmic source and drain contacts are formed with sputtered gold. The Schottky gate electrode is formed by metal oxides providing high barrier height and a reliable contact. The voltage swing of our inverters is superior to any other reported oxide devices. Annealing studies show that our devices withstand temperatures up to 150°C, partly improving during annealing.

Nanostructured Gold Thin Films Prepared by Pulsed Laser Deposition

2004 ◽  
Vol 19 (3) ◽  
pp. 950-958 ◽  
Author(s):  
Eric Irissou ◽  
Boris Le Drogoff ◽  
Mohammed Chaker ◽  
Michel Trudeau ◽  
Daniel Guay
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Crystallite Size ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanostructured Gold ◽  
The Mean ◽  
Gold Thin Films ◽  
Background Gas

A structural and morphological study of nanostructured gold thin films prepared by pulsed laser deposition in the presence of several inert background gases (Ar, He, and N2) and at various pressures (from 10 mTorr to 1 Torr) and target-to-substrate distances (from 1 to 10 cm) is presented. Structural and morphological analyses were undertaken using semiquantitative x-ray diffraction, scanning tunneling microscopy, and transmission electron microscopy. For each set of deposition conditions, the kinetic energy of the neutral gold species [Au(I)] present in the plasma plume was determined by time-of-flight emission spectroscopy and used to characterize the plasma dynamics. It is shown that all films exhibit a transition from highly [111] oriented to polycrystalline as the Au(I) kinetic energy decreases. The polycrystalline phase ratio is close to 0% for Au(I) kinetic energy larger than approximately 3.0 eV/atom and approximately 86 ± 10% for Au(I) kinetic energy smaller than approximately 0.30 eV/atom, irrespective of the background gas atmosphere. The mean crystallite size of both phases and the mean roughness of the films also follow a unique relation with the Au(I) kinetic energy, independently of the nature of the background gas, and nanocrystalline films with crystallite size as small as 12 nm are obtained for Au(I) kinetic energy smaller than 0.3 eV/atom.

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