Low interface state density and low leakage current of atomic-layer deposited TiO2/Al2O3/sulfur-treated GaAs

2012 ◽  
Vol 209 (11) ◽  
pp. 2147-2150 ◽  
Author(s):  
Ming-Kwei Lee ◽  
Chih-Feng Yen
Keyword(s):  
Leakage Current ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Low Leakage ◽  
Low Leakage Current

NF3 Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation

2014 ◽  
Vol 778-780 ◽  
pp. 619-622 ◽  
Author(s):  
Ryu Hasunuma ◽  
Masahito Nagoshi ◽  
Kikuo Yamabe
Keyword(s):  
Electrical Properties ◽  
Oxidation Process ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interface Properties ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Leakage Characteristics ◽  
Proper Balance

The electrical properties of SiO2/4H-SiC(0001) was characterized, and it was confirmed that the NF3 added oxidation in O2 can achieve interface with low interface state density. Optimization of NF3 added oxidation process was attempted to obtain films with both good interface properties and low leakage current. It was concluded that optimization of oxidation process should take account of obtaining proper balance among the rate of oxidation, which generates impurity carbon, the ability of carbon removal, and the rate of SiO2 etching which also affects the leakage characteristics.

Interface State Density of Atomic Layer Deposited Al2O3onβ-Ga2O3

2018 ◽  
Vol 85 (7) ◽  
pp. 27-30 ◽  
Author(s):  
Chen Yi Su ◽  
Takuya Hoshii ◽  
Iriya Muneta ◽  
Hitoshi Wakabayashi ◽  
Kazuo Tsutsui ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Characterization of Wet Chemical Atomic Layer Etching of InGaAs

2021 ◽  
Vol 314 ◽  
pp. 95-98
Author(s):  
Tomoki Hirano ◽  
Kenya Nishio ◽  
Takashi Fukatani ◽  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
...  
Keyword(s):  
Surface Condition ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Etching Process ◽  
Wet Chemical ◽  
Oxide Removal ◽  
Atomic Layer Etching

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.

High-Temperature Trench Capacitors, Using Thin-Film ALD Dielectrics

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000130-000133 ◽  
Author(s):  
Dorothee Dietz ◽  
Yusuf Celik ◽  
Andreas Goehlich ◽  
Holger Vogt ◽  
Holger Kappert
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Automobile Industry ◽  
Elevated Temperatures ◽  
Atomic Layer ◽  
Operating Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Soft Breakdown

High-temperature passive electronic becomes more and more important, e.g. in the field of deep drilling, aerospace or in automobile industry. For these applications, capacitors are needed, which are able to withstand temperatures up to 300 °C, which exhibit a low leakage current at elevated temperatures, a breakdown voltage above the intended operating voltage and a high capacitive density value. In this paper, investigations of 3D-integration and atomic layer deposition (ALD) techniques to achieve these features are presented. A highly n-doped Si-substrate acts as a bottom electrode. Medium- and high-k dielectrics represent the insulator and the upper electrode consists of Ru, TiN or TiAlCN. The materials can be used at elevated temperatures. At room temperature, the leakage current is less than 10 pA/mm2 without showing a soft-breakdown up to ± 15 V, indicating the absence of Fowler-Nordheim tunneling. At 300 °C and at 3 V the leakage current amounts about 1 nA/mm2 and at 5 V a soft-breakdown is detected.

scholarly journals Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5809
Author(s):  
Md. Mamunur Rahman ◽  
Ki-Yong Shin ◽  
Tae-Woo Kim
Keyword(s):  
Leakage Current ◽  
Deposition Temperature ◽  
Fundamental Property ◽  
Frequency Dispersion ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Semiconductor Interface ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Deposited Film

Frequency dispersion in the accumulation region seen in multifrequency capacitance–voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to be affected to some extent by the parameters of oxide growth caused by atomic layer deposition (ALD). In this study, the effects of variation in two ALD conditions, deposition temperature and purge time, on the formation of near-interfacial oxide traps in the Al2O3 dielectric are examined. In addition to the evaluation of these border traps, the most commonly examined electrical traps—i.e., interface traps—are also investigated along with the hysteresis, permittivity, reliability, and leakage current. The results reveal that a higher deposition temperature helps to minimize the formation of border traps and suppress leakage current but adversely affects the oxide/semiconductor interface and the permittivity of the deposited film. In contrast, a longer purge time provides a high-quality atomic-layer-deposited film which has fewer electrical traps and reasonable values of permittivity and breakdown voltage. These findings indicate that a moderate ALD temperature along with a sufficiently long purge time will provide an oxide film with fewer electrical traps, a reasonable permittivity, and a low leakage current.

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

2006 ◽  
Vol 89 (13) ◽  
pp. 133512 ◽  
Author(s):  
Kyoung H. Kim ◽  
Damon B. Farmer ◽  
Jean-Sebastien M. Lehn ◽  
P. Venkateswara Rao ◽  
Roy G. Gordon
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
High Dielectric
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