Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

2012 ◽  
Vol 209 (6) ◽  
pp. 1174-1178 ◽  
Author(s):  
Shaobo Dun ◽  
Yang Jiang ◽  
Jingqiang Li ◽  
Yulong Fang ◽  
Jiayun Yin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strain Relaxation ◽  
Micro Raman Spectroscopy ◽  
Heterojunction Field Effect Transistors ◽  
Spectroscopy Observation

scholarly journals Polythiophene–perylene diimide heterojunction field-effect transistors

2013 ◽  
Vol 1 (13) ◽  
pp. 2433 ◽  
Author(s):  
Sreenivasa Reddy Puniredd ◽  
Adam Kiersnowski ◽  
Glauco Battagliarin ◽  
Wojciech Zajączkowski ◽  
Wallace W. H. Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Perylene Diimide ◽  
Heterojunction Field Effect Transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

scholarly journals Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effects ◽  
Electrical Stress ◽  
Heterojunction Field Effect Transistors

scholarly journals Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Bishwajeet Singh Bhardwaj ◽  
Takeshi Sugiyama ◽  
Naoko Namba ◽  
Takayuki Umakoshi ◽  
Takafumi Uemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Charge Carrier ◽  
Molecular Orientation ◽  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Orientation Distribution ◽  
High Resolution Technique

Abstract Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. However, the charge carrier mobility is strongly dependent on the molecular orientation of pentacene in the active layer of the device, which is hard to investigate using standard techniques in a real device. Raman scattering, on the other hand, is a high-resolution technique that is sensitive to the molecular orientation. In this work, we investigated the orientation distribution of pentacene molecules in actual transistor devices by polarization-dependent Raman spectroscopy and correlated these results with the performance of the device. This study can be utilized to understand the distribution of molecular orientation of pentacene in various electronic devices and thus would help in further improving their performances.

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