Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

2012 ◽  
Vol 209 (3) ◽  
pp. 424-426 ◽  
Author(s):  
G. Naresh-Kumar ◽  
B. Hourahine ◽  
A. Vilalta-Clemente ◽  
P. Ruterana ◽  
P. Gamarra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Semiconductor Thin Films ◽  
Nitride Semiconductor ◽  
Scanning Electron

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

2021 ◽  
Author(s):  
Ahmed ZITI ◽  
Bouchaib HARTITI ◽  
Amine BELAFHAILI ◽  
Hicham LABRIM ◽  
Salah FADILI ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Uv Visible ◽  
The Impact ◽  
Scanning Electron

Abstract Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm− 1. EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 104 cm− 1, Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω cm)-1. These characteristics are suitable for solar cells applications.

Mimicking the Formation of Biomineral Composites through Deposition of Calcium Carbonate Thin-Films on Modified Fiber Net Templates

2003 ◽  
Vol 774 ◽  
Author(s):  
Parayil Kumaran Ajikumar ◽  
Rajamani Lakshminarayanan ◽  
Valiyaveettil Suresh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Calcium Carbonate ◽  
Scanning Electron Microscope ◽  
X Ray Diffraction ◽  
X Ray ◽  
Controlled Deposition ◽  
Scanning Electron

AbstractThin films of calcium carbonate were deposited on the surfaces of synthetic substrates using a simple biomimetic pathway. The Nylon 66 fiber knit pre-adsorbed with acidic polymers was used as a template for the controlled deposition of CaCO3 thin film. The presence of the soluble macromolecules on the fiber knit surface was characterized using ATR-FTIR spectroscopy. The characterization of the mineral films was carried out using scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive Xray scattering (EDX) studies.

The radiation chemistry of focused electron-beam induced etching of copper in liquids

Nanoscale ◽  
2019 ◽  
Vol 11 (24) ◽  
pp. 11550-11561 ◽  
Author(s):  
Sarah K. Lami ◽  
Gabriel Smith ◽  
Eric Cao ◽  
J. Todd Hastings
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Film Thickness ◽  
Radiation Chemistry ◽  
Environmental Scanning ◽  
System P ◽  
Scanning Electron

Well-controlled, focused electron-beam induced etching of copper thin films has been successfully conducted on bulk substrates in an environmental scanning electron microscope by controlling liquid-film thickness with an in situ correlative interferometry system.

Effect of Substrate Temperature on the Structural and Electrochromic Properties of Mo Doped WO3 Thin Films

2014 ◽  
Vol 781 ◽  
pp. 95-106 ◽  
Author(s):  
V. Madhavi ◽  
P. Kondaiah ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Substrate Temperature ◽  
Electrochromic Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrochromic Properties ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Mo (1.3 at.%) doped WO3 films were deposited on glass and ITO coated glass substrates held at substrate temperatures in the range 473 673 K by RF magnetron sputtering technique. The effect of substrate temperature on the structural and morphological, and electrochromic properties of the deposited films were investigated by X-ray diffraction, scanning electron microscope, Raman spectroscope and with electrochemical cell. X-ray diffraction profiles showed that the films formed at substrate temperature of 473 K consisted of weak (020) reflection related to the orthorhombic phase of WO3 in the amorphous matrix. The films formed at substrate temperatures 473 K were of polycrystalline in nature. The crystallite size of the films increased from 12 to 43 nm with increase of substrate temperature from 473 to 673 K. The scanning electron microscope images of the films formed at 473 K showed the leaf like structure with grain size of 1.2 μm. When substrate temperature increased to 573 K the size of the grains enhanced to 2.4 μm. Raman spectra of the films confirmed the presence of characteristic vibration modes of W = O, W - O - W and O - W - O. The optical band gap of the films increased with increase of substrate temperature. The electrochromic property, that is the color efficiency increased from 42.5 to 50.5 cm2/C with the increase of substrate temperature from 473 to 673 K respectively. The structural and electrochromic properties of the Mo doped WO3 films will be correlated with the substrate temperature maintained during growth of the films.

scholarly journals Excellent buffer layer for growing high-quality Y–Ba–Cu–O thin films

2001 ◽  
Vol 16 (10) ◽  
pp. 2864-2868 ◽  
Author(s):  
W. H. Tang ◽  
J. Gao ◽  
C. X. Liu ◽  
Z. H. Mai
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Buffer Layer ◽  
Small Angle ◽  
Average Roughness ◽  
X Ray ◽  
Flat Interface ◽  
Ybco Thin Films ◽  
Scanning Electron

Eu2CuO4 (ECO) has been used as a buffer layer for growing of Yba2Cu3O7–δ (YBCO) thin films on SrTiO3(100) and Y-stabilized ZrO2(100) substrates. The epitaxy, crystallinity, and surface of YBCO thin films have been significantly improved by using ECO buffer layer as investigated by x-ray diffraction, rocking curves, scanning electron microscope, surface step profiler, and x-ray small-angle reflection. The best value of the full width at half-maximum of the YBCO(005) peak can be greatly reduced down to less than 0.1°. The scanning-electron-microscope photos indicate a very smooth surface for the YBCO thin films. The average roughness is less than 5 nm over a wide scanning region of 2000 mm. The results of x-ray small-angle reflection indicate a very clear and flat interface between YBCO and ECO layers. Meanwhile, the resistivity of ECO is about 20 times higher than that of PrBa2Cu3Oy at the boiling point of liquid nitrogen. Our results suggest that ECO should be a good barrier candidate for fabricating high-Tc superconductor junctions.

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