Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

2012 ◽  
Vol 209 (3) ◽  
pp. 501-504 ◽  
Author(s):  
Shin Hashimoto ◽  
Katsushi Akita ◽  
Yoshiyuki Yamamoto ◽  
Masaki Ueno ◽  
Takao Nakamura ◽  
...  
2013 ◽  
Vol 114 (3) ◽  
pp. 033105 ◽  
Author(s):  
N. Nader Esfahani ◽  
R. E. Peale ◽  
W. R. Buchwald ◽  
C. J. Fredricksen ◽  
J. R. Hendrickson ◽  
...  

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