Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
2012 ◽
Vol 209
(3)
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pp. 501-504
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2016 ◽
Vol 55
(8)
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pp. 084301
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2020 ◽
Vol 38
(2)
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pp. 023202
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2014 ◽
Vol 53
(4S)
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pp. 04EF09
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2018 ◽
Vol 32
(2)
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pp. e2518
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2002 ◽