Effect of the deposition rate on ITO thin film properties prepared by ion beam assisted deposition (IBAD) technique

2010 ◽  
Vol 207 (7) ◽  
pp. 1538-1542 ◽  
Author(s):  
Li-Jian Meng ◽  
V. Teixeira ◽  
M. P. dos Santos
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Ion Beam ◽  
Film Properties ◽  
Ion Beam Assisted Deposition

Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

2011 ◽  
Vol 519 (21) ◽  
pp. 7317-7320 ◽  
Author(s):  
H. Zachmann ◽  
S. Puttnins ◽  
F. Daume ◽  
A. Rahm ◽  
K. Otte
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Ion Beam ◽  
Thin Film Solar Cells ◽  
Ion Beam Assisted Deposition

Dry processing of thin film capacitors arrays using ion beam assisted deposition

2004 ◽  
Vol 447-448 ◽  
pp. 388-391 ◽  
Author(s):  
Ari Ide-Ektessabi ◽  
Hiroki Uehara ◽  
Susumu Kamitani
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Dry Processing ◽  
Thin Film Capacitors

Microstructural observation of a composite film of c-BN and h-BN phases

2000 ◽  
Vol 15 (11) ◽  
pp. 2292-2295 ◽  
Author(s):  
Young-Joon Park ◽  
Young-Joon Baik ◽  
Jae Hyoung Choi ◽  
Jeong Yong Lee ◽  
Jun-Hee Hahn
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Composite Film ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Microstructural Observation ◽  
Ion Beam Assisted Deposition

BN films consisting of c-BN and h-BN phases were synthesized using an ion-beam-assisted deposition process. In contrast to conventional observations, the c-BN and h-BN phases did not form separate layers, but were distributed in the form of nano-sized grains throughout the film thickness. No distinctly aligned h-BN layer was observed before the c-BN phase. Such a mixed character of the film was attributed to a localized ion bombardment effect instead of the macro-stress. Possibly because of the presence of scattered h-BN phases, the thin film described here possessed a low hardness of about 20 GPa and a low stress of about 5 GPa, compared with other reported c-BN-containing films.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition

2009 ◽  
Vol 517 (23) ◽  
pp. 6341-6344 ◽  
Author(s):  
Y. Vygranenko ◽  
K. Wang ◽  
R. Chaji ◽  
M. Vieira ◽  
J. Robertson ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Ion Beam ◽  
Oxide Thin Film ◽  
Ion Beam Assisted Deposition ◽  
Indium Oxide Thin Film
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