scholarly journals Thermionic and tunneling transport mechanisms in graphene field-effect transistors

2008 ◽  
Vol 205 (7) ◽  
pp. 1527-1533 ◽  
Author(s):  
Victor Ryzhii ◽  
Maxim Ryzhii ◽  
Taiichi Otsuji
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Mechanisms ◽  
Tunneling Transport

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

2015 ◽  
Vol 106 (8) ◽  
pp. 083501 ◽  
Author(s):  
Takahiro Mori ◽  
Yukinori Morita ◽  
Noriyuki Miyata ◽  
Shinji Migita ◽  
Koichi Fukuda ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Transport

scholarly journals Ladder-type bithiophene imide-based organic semiconductors: understanding charge transport mechanisms in organic field effect transistors

2020 ◽  
Vol 8 (44) ◽  
pp. 15759-15770
Author(s):  
Alexandra Harbuzaru ◽  
Iratxe Arrechea-Marcos ◽  
Alberto D. Scaccabarozzi ◽  
Yingfeng Wang ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Charge Transport ◽  
Chain Length ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Mechanisms ◽  
Organic Field Effect Transistors

Different charge transport mechanisms at the device interface are found for a series of ladder-type semiconductors with increasing chain length.

scholarly journals Nanowire Tunnel Field Effect Transistors at High Temperature

2013 ◽  
Vol 8 (2) ◽  
pp. 110-115
Author(s):  
Márcio D. V. Martino ◽  
Felipe S. Neves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Rita Rooyackers ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Transport Mechanisms ◽  
Temperature Influence ◽  
Subthreshold Slope ◽  
Band To Band Tunneling ◽  
Trap Assisted Tunneling ◽  
Working Principle

The aim of this work is to study how the performance of nanowire tunnel field effect transistors (TFETs) is influenced by temperature variation. First of all, simulated energy band diagrams were presented to justify its fundamental working principle and this analysis was compared to experimental data obtained for temperature ranging from 300 to 420 K. This methodology was performed for different nanowire diameters and bias conditions, leading to a deep investigation of parameters such as the ratio of on-state and off-state current (ION/IOFF) and the subthreshold slope (S). Three different transport mechanisms (band-to-band tunneling, Shockley-Read-Hall generation/recombination and trap-assisted tunneling) were highlighted to explain the temperature influence on the drain current. As the final step, subthreshold slope values for each configuration were compared to the room temperature. Therefore, it was observed that larger nanowire diameters and lower temperatures tended to increase ION/IOFF ratio. Meanwhile, it was clear that band-to-band tunneling prevailed for higher gate voltage bias, resulting in a much slighter temperature effect on the drain current.

TWO-DIMENSIONAL HOLES IN GaAs HIGFETs: FABRICATION METHODS AND TRANSPORT MEASUREMENTS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1219-1227 ◽  
Author(s):  
JIAN HUANG ◽  
D. S. NOVIKOV ◽  
D. C. TSUI ◽  
L. N. PFEIFFER ◽  
K. W. WEST
Keyword(s):  
Power Law ◽  
Low Temperatures ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Process ◽  
Hole Density ◽  
Two Dimensional ◽  
Transport Mechanisms ◽  
Transport Measurements ◽  
Dilute System

We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in HIGFETs, the disorder is likely to be less than that in the modulation-doped samples. We established a process that eliminates the well-known gate leakage problem. The hole density in our devices can be continuously tuned down to a record low value of 7 × 108 cm -2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a non-activated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly-interacting regime.

scholarly journals Orientation-Dependent Electronic Structures and Charge Transport Mechanisms in Ultrathin Polymeric n-Channel Field-Effect Transistors

2013 ◽  
Vol 5 (10) ◽  
pp. 4417-4422 ◽  
Author(s):  
Simone Fabiano ◽  
Hiroyuki Yoshida ◽  
Zhihua Chen ◽  
Antonio Facchetti ◽  
Maria Antonietta Loi
Keyword(s):  
Charge Transport ◽  
Electronic Structures ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Mechanisms
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