First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2high-Kgate dielectric

2008 ◽  
Vol 205 (1) ◽  
pp. 199-203 ◽  
Author(s):  
L. F. Mao ◽  
Z. O. Wang
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
First Principles ◽  
Oxygen Vacancies ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures

2016 ◽  
Vol 619 ◽  
pp. 48-52 ◽  
Author(s):  
Chengji Jin ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
He Guan ◽  
Zheng Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Semiconductor Structures

scholarly journals Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 661
Author(s):  
Man Ding
Keyword(s):  
Metal Oxide ◽  
Total Dose ◽  
Leakage Current ◽  
Gamma Ray ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trapping Efficiency ◽  
Semiconductor Structures ◽  
Radiation Induced

The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al2O3 based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transportation and trapping characteristics of radiation induced charges were studied by using electronic, physical and chemical methods. Firstly, the radiation induced trapped charge density in Al2O3 is up to 1012 cm−2, with the effective trapping efficiency of 7–20% under irradiation. Secondly, the leakage current through Al2O3 changes little with the increase of radiation total dose. Thirdly, oxygen vacancy in Al2O3 and O dangling bonds and Al-Si metallic bonds at Al2O3/Si interface are dominant radiation induced defects in Al2O3/Si system, and the valence band offset between Al2O3 and Si is found to decrease after irradiation. From the results we can see that Al2O3 is radiation resistant from the aspect of leakage current and crystallization characteristics, but the radiation induced charge trapping and new defects in Al2O3/Si structure cannot be ignored. This paper provides a reference for the space application of Al2O3 based MOS devices.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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