Epitaxial vapor-liquid-solid growth of silicon nano-whiskers by electron beam evaporation

2006 ◽  
Vol 203 (15) ◽  
pp. 3692-3698 ◽  
Author(s):  
V. Sivakov ◽  
G. Andrä ◽  
U. Gösele ◽  
S. Christiansen
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Growth peculiarities during vapor–liquid–solid growth of silicon nanowhiskers by electron-beam evaporation

2006 ◽  
Vol 85 (3) ◽  
pp. 311-315 ◽  
Author(s):  
V. Sivakov ◽  
G. Andrä ◽  
C. Himcinschi ◽  
U. Gösele ◽  
D.R.T. Zahn ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals GaAs Nanowires on Si Nanopillars : Towards Large Scale, Phase-engineered Arrays.

2022 ◽  
Author(s):  
Lucas Güniat ◽  
Lea Ghisalberti ◽  
Li Wang ◽  
Christian Dais ◽  
Nicholas Morgan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Large Scale ◽  
Vapor Liquid Solid ◽  
Feature Size ◽  
Gaas Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60nm holes). In fact, arrays are traditionally manufactured using electron-beam...

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Vapor–Liquid–Solid Growth of Endotaxial Semiconductor Nanowires

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5565-5570 ◽  
Author(s):  
Shaozhou Li ◽  
Xiao Huang ◽  
Qing Liu ◽  
Xiehong Cao ◽  
Fengwei Huo ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–liquid–solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy

2004 ◽  
Vol 464-465 ◽  
pp. 244-247 ◽  
Author(s):  
S. Bhunia ◽  
T. Kawamura ◽  
S. Fujikawa ◽  
H. Nakashima ◽  
K. Furukawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Vapor Liquid Solid ◽  
Vertically Aligned ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid
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