Self-assembly of GaAs holed nanostructures by droplet epitaxy

2005 ◽  
Vol 202 (8) ◽  
pp. R85-R87 ◽  
Author(s):  
Zhiming M. Wang ◽  
Kyland Holmes ◽  
John L. Shultz ◽  
Gregory J. Salamo
Keyword(s):  
Self Assembly ◽  
Droplet Epitaxy

Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

2012 ◽  
Vol 112 (6) ◽  
pp. 063510 ◽  
Author(s):  
T. Noda ◽  
T. Mano ◽  
M. Jo ◽  
T. Kawazu ◽  
H. Sakaki
Keyword(s):  
Self Assembly ◽  
Droplet Epitaxy ◽  
Ring Complexes ◽  
Inp Substrates

Self-assembly of GaAs holed nanostructures by droplet epitaxy

2005 ◽  
Vol 202 (8) ◽  
pp. 1339-1339 ◽  
Author(s):  
Zhiming M. Wang ◽  
Kyland Holmes ◽  
John L. Shultz ◽  
Gregory J. Salamo
Keyword(s):  
Self Assembly ◽  
Droplet Epitaxy

Self-Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy

2013 ◽  
Vol 24 (4) ◽  
pp. 530-535 ◽  
Author(s):  
Jiang Wu ◽  
Yusuke Hirono ◽  
Xinlei Li ◽  
Zhiming M. Wang ◽  
Jihoon Lee ◽  
...  
Keyword(s):  
Self Assembly ◽  
Droplet Epitaxy

Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy

2011 ◽  
Vol 4 (5) ◽  
pp. 055501 ◽  
Author(s):  
Masafumi Jo ◽  
Joris. G. Keizer ◽  
Takaaki Mano ◽  
Paul M. Koenraad ◽  
Kazuaki Sakoda
Keyword(s):  
Self Assembly ◽  
Quantum Wires ◽  
Droplet Epitaxy

Regimes of GaAs quantum dot self-assembly by droplet epitaxy

2007 ◽  
Vol 76 (7) ◽  
Author(s):  
Ch. Heyn ◽  
A. Stemmann ◽  
A. Schramm ◽  
H. Welsch ◽  
W. Hansen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Self Assembly ◽  
Droplet Epitaxy ◽  
Gaas Quantum Dot

Self-assembly of Semiconductor Quantum Dots by Droplet Epitaxy

2006 ◽  
Vol 959 ◽  
Author(s):  
Nobuyuki Koguchi
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Substrate Surface ◽  
Molecular Beams ◽  
Droplet Epitaxy ◽  
Ring Shape ◽  
Direct Formation ◽  
Growth Method ◽  
Ring Structures ◽  
Column Element

ABSTRACTWe have proposed a novel self-assembling growth method, termed Droplet Epitaxy, for the direct formation of QDs without using any lithography in 1990. Compared with the island formation based on the Stranski-Krastanow growth mode, the Droplet Epitaxy is applicable to the formation of quantum dots not only in lattice-mismatched but also in lattice-matched systems such as GaAs/AlGaAs. The process of the Droplet Epitaxy in MBE chamber consists of forming numerous III-column element droplets such as Ga or InGa with homogeneous size of around 10 nm on the substrate surface first by supplying their molecular beams, and then reacting the droplets with As molecular beam to produce GaAs or InGaAs epitaxial microcrystals. Another advantage of the Droplet Epitaxy is the possibility of the fabrication of QDs structures without wetting layer by cotrolling the stoichiometry of the substrate surface just before the deposition of III-column element droplets. Also we can control the shape of the QDs structure self-organizingly such as pyramidal shape, single-ring shape and concentric double-ring shape. These ring structures will provide excellent possibilities for the investigation of quantum topological phenomena.

Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

2017 ◽  
Vol 477 ◽  
pp. 239-242 ◽  
Author(s):  
Martin Elborg ◽  
Takeshi Noda ◽  
Takaaki Mano ◽  
Takashi Kuroda ◽  
Yuanzhao Yao ◽  
...  
Keyword(s):  
Self Assembly ◽  
Droplet Epitaxy ◽  
Quantum Ring ◽  
Vertically Aligned

GROWTH MECHANISM OF RING SHAPED NANOSTRUCTURES SELF-ASSEMBLY UPON DROPLET EPITAXY

2012 ◽  
Vol 19 (03) ◽  
pp. 1250029 ◽  
Author(s):  
X. TAN ◽  
J. X. ZHONG ◽  
G. W. YANG
Keyword(s):  
Monte Carlo ◽  
Self Assembly ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Diffusion Barriers ◽  
The Self ◽  
Droplet Epitaxy ◽  
Enhanced Diffusion ◽  
Theoretical Predictions ◽  
Kinetic Monte Carlo Simulations

A quantitatively kinetic model has been established to address the self-assembly of the ring shaped nanostructures upon the droplet epitaxy via kinetic Monte Carlo simulations. The theoretical predictions about the temperature and As flux dependences of the self-assembly of the ring shaped nanostructures were in well agreement with recent experiments. It was found that the morphological evolution of the ring shaped nanostructures was attributed to the cooperation of the enhanced diffusion barriers of free Ga atoms in the inner ring region and the effects of the surface reconstruction around the Ga droplets during the arsenization step.

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