Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature

2004 ◽  
Vol 201 (11) ◽  
pp. 2561-2565 ◽  
Author(s):  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Hisao Kanda
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Luminescence Spectra

scholarly journals Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Kenji Watanabe ◽  
Takashi Taniguchi
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Layered Materials ◽  
High Pressure High Temperature ◽  
Far Ultraviolet

Abstract Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic-layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-ultraviolet photoluminescence microscope was developed. This microscope makes it possible to visualize the impure-growth region with ease in a no-contact and non-destructive manner.

scholarly journals Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Lichao Cai ◽  
Bin Xu ◽  
Meizhe Lv ◽  
Feng Jia ◽  
Xingdong Yuan
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Growth Mechanism ◽  
Cubic Boron Nitride ◽  
Crystal Defects ◽  
Synthetic Process ◽  
Growth Defects ◽  
Hole Defects

Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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