An advanced combustion control system. The availability of powerful microprocessors and associated memory and large scale integrated circuits provides exciting new opportunities for the system designer in process control

1983 ◽  
Vol 2 (1) ◽  
pp. 30-34 ◽  
Author(s):  
Keith Swanson
Keyword(s):  
Control System ◽  
Process Control ◽  
Integrated Circuits ◽  
Large Scale ◽  
Combustion Control ◽  
System Designer ◽  
Advanced Combustion

Validation of the process control system of an automated large scale manufacturing plant

1998 ◽  
Vol 72 (6) ◽  
pp. 333-342
Author(s):  
Heinz Neuhaus ◽  
Hans Kremers ◽  
Thomas Karrer ◽  
R.Helge Traut
Keyword(s):  
Control System ◽  
Process Control ◽  
Large Scale ◽  
Process Control System ◽  
Manufacturing Plant

scholarly journals Performance Assessment of a Boiler Combustion Process Control System Based on a Data-Driven Approach

Processes ◽  
2018 ◽  
Vol 6 (10) ◽  
pp. 200 ◽  
Author(s):  
Shizhe Li ◽  
Yinsong Wang
Keyword(s):  
Control System ◽  
Quantitative Analysis ◽  
Power Plant ◽  
Process Control ◽  
Performance Assessment ◽  
Combustion Process ◽  
Data Driven ◽  
Combustion Control ◽  
Qualitative And Quantitative Analysis ◽  
Qualitative And Quantitative

For the requirements of performance assessment of the thermal power plant control process, the combustion control system of a 330 MW generator unit in a power plant is studied. Firstly, the five variables that affect the process control performance are determined by the mechanism analysis method. Then, a data-driven performance assessment method based on the operational data collection from the supervisory information system was proposed. Using principal component analysis technique, we found that five different variables have different degrees of effect on the performance of the combustion process. By means of qualitative and quantitative analysis, five contribution rates of different variables affecting the performance index of the system were obtained. After that, the data is normalized to the non-dimensional variable, the performance assessment index of the boiler combustion process is defined, and the classification and assessment criterion of it are given. Through using the proposed method on the operation data of the 1# boiler and 2# boiler within 1 day, the performance indexes are calculated and achieved during different time periods. Analysis of the results shows that this method will not generate additional disturbance to the normal operation of the system, and it can achieve a simple, reliable, accurate and rapid qualitative and quantitative analysis of the performance of the boiler combustion control system, and also it can be extended and applied to other multivariable control systems.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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